2SK3209-E RENESAS [Renesas Technology Corp], 2SK3209-E Datasheet
2SK3209-E
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2SK3209-E Summary of contents
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... Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance typ. DS High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) Rev.3.00 Sep 07, 2005 page ...
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... Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes duty cycle ° 2. Value ° ...
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... SC-67 PRSS0003AD-A 1.2 ± 0.2 1.4 ± 0.2 2.54 ± 0.5 Ordering Information Part Name 2SK3209-E 500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Sep 07, 2005 page Package Name MASS[Typ.] TO-220FM / TO-220FMV 1.8g 10.0 ± ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...