2SK3209-E RENESAS [Renesas Technology Corp], 2SK3209-E Datasheet - Page 2

• Manufacturer Part Number: 2SK3209-E
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

2SK3209
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Electrical Characteristics
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Note:
Rev.3.00 Sep 07, 2005 page 2 of 3
2. Value at Tc = 25
3. Value at Tch = 25
4. Pulse test
Item
10 s, duty cycle
Item
°
C
°
C, Rg
1 %
50
Symbol
V
V
R
R
V
Coss
(BR)DSS
(BR)GSS
Crss
Ciss
t
t
I
I
V
GS(off)
|y
DS(on)
DS(on)
d(on)
d(off)
GSS
DSS
t
t
t
DF
rr
fs
r
f
|
Min
150
1.0
18
—
—
—
—
—
—
—
—
—
—
—
—
—
20
Symbol
I
D(pulse)
Pch*
E
V
V
Tstg
I
Tch
AP
I
AR
DSS
GSS
I
DR
D
*
*
3
2600
3
2
0.90
*
Typ
820
350
180
600
280
100
40
45
30
25
1
—
—
—
—
—
Max
2.5
10
45
63
—
—
—
—
—
—
—
—
—
—
—
—
10
–55 to +150
Ratings
Unit
m
m
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
V
150
100
150
A
A
25
25
25
46
35
20
I
I
V
V
I
I
I
I
V
f = 1 MHz
I
R
I
I
di
D
G
D
D
D
D
D
F
F
GS
DS
DS
L
F
= 25 A, V
= 25 A, V
= 10 mA, V
= 1 mA, V
= 15 A, V
= 15 A, V
= 15 A, V
= 15 A, V
= 100 A, V
/ dt = 50 A/ s
= 2
= 16 V, V
= 150 V, V
= 10 V, V
Test Conditions
GS
GS
GS
GS
DS
GS
DS
GS
GS
= 0
= 0
= 10 V*
= 4 V*
= 10 V*
= 10 V,
DS
GS
= 10 V
DS
= 0
= 0,
= 0
= 0
= 0
Unit
mJ
°
°
W
V
V
A
A
A
A
(Ta = 25°C)
(Ta = 25°C)
4
C
C
4
4