2SK3987-01S FUJI [Fuji Electric], 2SK3987-01S Datasheet
2SK3987-01S
Manufacturer Part Number
2SK3987-01S
Description
N-CHANNEL SILICON POWER MOSFET
Manufacturer
FUJI [Fuji Electric]
Datasheet
1.2SK3987-01S.pdf
(4 pages)
2SK3987-01L,S,SJ
Super FAP-G Series
Note *1 Tch 150°C
Note *2 Starting Tch=25°C, I
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
Note *4 I
http://www.fujielectric.co.jp/fdt/scd/
Thermalcharacteristics
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Non-repetitive
Maximum avalanche energy
Repetitive
Maximum avalanche energy
Maximum drain-source dV/dt
Peak diode recovery dV/dt
Maximum power dissipation
Operating and storage
temperature range
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Thermal resistance
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Item
Electrical characteristics (T
Features
High speed switching
No secondary breadown
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
E
See to ‘Transient Thermal impedance’ graph.
See to ‘Avalanche Energy’ graph.
F
AS
= <
= <
= <
-I
limited by maximum channel temperrature and avalanche current.
D
, -di/dt=50A/μs, Vcc BV
off
on
AS
=1.5A, L=186mH, V
= <
c
Symbol
V
V
I
I
V
I
E
E
dV
dV/dt
P
T
T
D
D(puls]
AR
=25°C unless otherwise specified)
AS
D
ch
AR
stg
DS
DSX
GS
DS
DSS
/dt
R
R
Symbol
, Tch 150°C
Symbol
BV
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
V
trr
Q
th(ch-c)
th(ch-a)
GSS
f
DC-DC converters
I
r
Low driving power
fs
Low on-resistance
DSS
GS(th)
DS(on)
iss
oss
rss
SD
G
GS
GD
rr
(on)
(off)
DSS
CC
= <
=50V, R
-55 to +150
Ratings
+150
Absolute maximum ratings
500
500
±14.4
±30
227.9
20
60
3.6
3.6
6.0
5
2.02
G
Test Conditions
V
V
R
Test Conditions
I
I
V
V
V
V
f=1MHz
V
I
V
I
I
-di/dt=100A/μs
=50Ω
V
I
I
channel to ambient
channel to case
D
D
D
D
F
F
D
CC
GS
DS
DS
GS
GS
DS
GS
CC
GS
=3.6A V
=3.6A V
= 250 μ A
= 250 μ A
=3.6A
=1.8A
=1.8A
=400V
=300V I
=10V
=10 Ω
=500V V
=±30V
=25V
=10V
=0V
=250V
Unit
mJ
mJ
kV/μs
kV/μs
W
W
°C
°C
A
A
A
V
V
V
N-CHANNEL SILICON POWER MOSFET
V
V
GS
GS
V
GS
DS
D
VGS=-30V
Note *1
Note *2
Note *3
VDS 500V
Note *4
Tc=25 °C
Ta=25 °C
=0V T
V
DS
=0V
FUJI POWER MOSFET
Remarks
GS
=1.8A
V
V
=10V
=25V
GS
GS
DS
=0V
=0V
T
=0V
=0V
=V
= <
ch
=25°C
ch
GS
=25°C
T
T
ch
ch
=125°C
=25°C
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Min.
Min.
500
3.0
1.7
See to P4
Typ.
Typ.
330
50
23
13
11
1.84
3.4
2.5
5.0
6.0
5.5
2.5
1.00
0.5
2.3
Source(S)
Drain(D)
Max.
Max.
62.0
250
100
500
2.083
25
75
18
35
20
5.0
2.3
5.0
7.5
9.0
8.5
3.8
1.50
Units
Units
°C/W
°C/W
200511
ns
V
V
μA
nA
Ω
S
pF
nC
V
μs
μC
1
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2SK3987-01S Summary of contents
Page 1
... Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) Maximum ratings and characteristic (Tc=25°C unless otherwise specified) Item Symbol Drain-source voltage DSX Continuous drain current I D Pulsed drain current I D(puls] Gate-source voltage ...
Page 2
... Characteristics FUJI POWER MOSFET 2 ...
Page 3
... FUJI POWER MOSFET 3 ...
Page 4
... Outline Drawings [mm] T-pack(L) http://www.fujielectric.co.jp/fdt/scd/ FUJI POWER MOSFET T-pack(SJ) [D2-pack] T-pack(S) 4 ...