2N5114_TO-18

Manufacturer Part Number2N5114_TO-18
DescriptionP-CHANNEL JFET
ManufacturerMICROSS [Micross Components]
2N5114_TO-18 datasheet
 
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Linear Systems replaces discontinued Siliconix 2N5114
This analog switch is designed for inverting switching
into inverting input of an Operational Amplifier.
The hermetically sealed TO-18 package is well suited
for hi-reliability and harsh environment applications.
(See Packaging Information).
2N5114 Benefits:
Low On Resistance
I
≤ 500 pA
D(off)
Switches directly from TTL logic
2N5114 Applications:
Analog Switches
Commutators
Choppers
2N5114 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
BV
 
Gate to Source Breakdown Voltage 
GSS
V
 
Gate to Source Cutoff Voltage 
GS(off)
V
 
Gate to Source Forward Voltage 
GS(F)
 
 
V
 
Drain to Source On Voltage 
DS(on)
I
 
Drain to Source Saturation Current (Note 2) 
DSS
I
 
Gate Reverse Current 
GSS
I
 
Gate Operating Current 
G
Click To Buy
 
 
I
 
Drain Cutoff Current 
D(off)
r
 
Drain to Source On Resistance 
DS(on)
2N5114 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
CHARACTERISTIC 
g
 
Forward Transconductance 
fs
g
 
Output Conductance 
os
r
 
Drain to Source On Resistance 
DS(on)
C
 
Input Capacitance 
iss
 
 
C
 
Reverse Transfer Capacitance 
rss
e
 
Equivalent Noise Voltage 
n
2N5114 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
CHARACTERISTIC 
t
 
Turn On Time 
d(on)
t
 
Turn On Rise Time 
r
t
 
Turn Off Time 
d(off)
t
 
Turn Off Fall Time 
f
Note 1 ‐ Absolute maximum ratings are limiting values above which 2N5114 serviceability may be impaired.  Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3% 
2N5114 SWITCHING CIRCUIT PARAMETERS                                                                                                                          
V
 
‐10V 
 
DD
V
 
20V 
 
GG
R
 
430Ω 
 
L
R
 
100Ω 
 
G
I
 
‐15mA 
 
D(on)
Micross Components Europe
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
2N5114
P-CHANNEL JFET
FEATURES 
DIRECT REPLACEMENT FOR SILICONIX 2N5114 
LOW ON RESISTANCE 
LOW CAPACITANCE 
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature 
Operating Junction Temperature 
Maximum Power Dissipation 
Continuous Power Dissipation  
MAXIMUM CURRENT
Gate Current (Note 1) 
MAXIMUM VOLTAGES 
Gate to Drain Voltage 
Gate to Source Voltage 
MIN 
TYP. 
30 
‐‐ 
‐‐ 
‐‐ 
‐0.7 
‐‐ 
‐1.0 
‐‐ 
‐0.7 
‐‐ 
‐0.5 
‐30 
‐‐ 
‐‐ 
‐‐ 
‐5 
‐‐ 
‐10 
‐‐ 
‐10 
‐‐ 
‐10 
‐‐ 
‐‐ 
MIN 
TYP. 
‐‐ 
4.5 
‐‐ 
20 
‐‐ 
‐‐ 
‐‐ 
20 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
20 
 
UNITS 
 
 
10 
ns 
15 
                                                                                                                 
Available Packages:
2N5114 in TO-18
2N5114 in bare die.
Please contact Micross for full
package and die dimensions
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
MAX 
UNITS 
CONDITIONS 
‐‐ 
 
I
= 1µA,   V
 
10 
V
 = ‐15V, I
DS
‐1 
I
= ‐1mA,   V
‐1.3 
V
 = 0V, I
GS
‐‐ 
V
 = 0V, I
GS
‐‐ 
V
 = 0V, I
GS
‐90 
mA 
V
 = ‐18V, V
DS
500 
 
V
= 20V,  V
GS 
‐‐ 
 
V
 = ‐15V,  I
DS
pA 
‐500 
V
 = ‐15V, V
DS
 
‐‐ 
V
 = ‐15V, V
DS
‐‐ 
V
 = ‐15V, V
DS
75 
Ω 
I
= ‐1mA,   V
MAX 
UNITS 
CONDITIONS 
‐‐ 
mS 
V
 = ‐15V,  I
DS
‐‐ 
µS 
75 
Ω 
I
= 0A,   V
25 
 
V
 = ‐15V, V
DS
pF 
V
 = 0V, V
DS
‐‐ 
V
 = 0V, V
DS
‐‐ 
V
 = 0V, V
DS
‐‐ 
nV/√Hz 
V
 = 10V,  I
DG
CONDITIONS 
V
(L) = ‐11V 
GS
V
(H) = 0V 
GS
 
See Switching Circuit 
SWITCHING TEST CIRCUIT
TO-18 (Bottom View)
r
≤ 75Ω 
DS(on) 
6pF 
‐55°C to +200°C 
‐55°C to +200°C 
500mW 
I
 = ‐50mA 
G
V
 = 30V 
GDS
V
 = 30V 
GSS
 = 0V 
DS
 = ‐1nA 
D
 = 0V 
DS
 = ‐15mA 
D
 = ‐7mA 
D
 = ‐3mA 
D
= 0V 
GS 
 = 0V 
DS
 = ‐1mA 
D
= 12V 
GS 
= 7V 
GS 
= 5V 
GS 
 = 0V 
GS
 = 1mA , f = 1kHz 
D
 = 0V,   f = 1kHz 
GS
= 0V, f = 1MHz 
GS 
= 12V, f = 1MHz 
GS 
= 7V, f = 1MHz 
GS 
= 5V, f = 1MHz 
GS 
 = 10mA , f = 1kHz 
D