ADG758 Analog Devices, ADG758 Datasheet - Page 3

• Manufacturer Part Number: ADG758
• Description: 3 ohm/ 4-/8-Channel Multiplexers in Chip Scale Package
• Manufacturer: Analog Devices

SPECIFICATIONS
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTES
1
2
Specifications subject to change without notice.
REV. A
Temperature ranges are as follows: B Version: –40°C to +85°C.
Guaranteed by design, not subject to production test.
Analog Signal Range
ON Resistance (R
ON Resistance Match Between
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current
C
t
Break-Before-Make Time Delay, t
t
t
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
–3 dB Bandwidth
C
C
C
I
TRANSITION
ON
OFF
DD
IN
S
D
D
Channels (∆R
I
ADG758
ADG759
ADG758
ADG759
INL
(OFF)
, C
, Digital Input Capacitance
(EN)
(OFF)
(EN)
S
or I
(ON)
INH
ON
ON
)
)
D
INL
INH
S
D
(OFF)
(OFF)
, I
S
(ON)
1
2
D
(V
DD
= 3 V
+25 C
8
11
± 0.01
± 0.1
± 0.01
± 0.1
± 0.01
± 0.1
0.005
2
18
8
18
8
± 3
–60
–80
–60
–80
55
13
85
42
96
48
0.001
B Version
10%, V
SS
= 0 V, GND = 0 V, unless otherwise noted.)
–40 C
to +85 C
0 V to V
12
0.4
1.2
± 0.3
± 0.75
± 0.75
± 0.1
30
1
30
15
1.0
2.0
0.8
–3–
DD
Unit
V
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns min
ns typ
ns max
ns typ
ns max
pC typ
dB typ
dB typ
dB typ
dB typ
MHz typ
pF typ
pF typ
pF typ
pF typ
pF typ
µA typ
µA max
Test Conditions/Comments
V
Test Circuit 1
V
V
V
Test Circuit 2
V
Test Circuit 3
V
V
R
V
R
V
R
V
R
V
V
Test Circuit 8
R
R
Test Circuit 9
R
R
Test Circuit 10
R
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
V
Digital Inputs = 0 V or 3.3 V
S
S
DD
S
S
S
IN
L
S1
L
S
L
S
L
S
S
L
L
L
L
L
DD
= 2 V; Test Circuit 6
= 0 V to V
= 0 V to V
= 3 V/1 V, V
= 3 V/1 V, V
= V
= 2 V; Test Circuit 7
= 2 V; Test Circuit 7
= 1.5 V, R
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= 2 V/0 V, V
= V
= 3.3 V
= 3.3 V
D
INL
= 1 V or 3 V; Test Circuit 4
or V
L
L
L
L
L
DD
DD
S
ADG758/ADG759
L
L
L
L
= 5 pF, f = 10 MHz
= 5 pF, f = 1 MHz;
= 5 pF, f = 10 MHz
= 5 pF, f = 1 MHz;
= 5 pF; Test Circuit 11
= 0 Ω, C
INH
D
D
, I
, I
= 35 pF; Test Circuit 5
= 35 pF
= 35 pF
= 35 pF
S2
= 1 V/3 V;
= 1 V/3 V;
DS
DS
= 0 V/2 V
= 10 mA;
= 10 mA
L
= 1 nF;