M48Z35AV ST Microelectronics, M48Z35AV Datasheet - Page 5

• Manufacturer Part Number: M48Z35AV
• Description: 256 Kbit 32Kb x8 ZEROPOWER SRAM
• Manufacturer: ST Microelectronics

Table 5. Capacitance
(T
Note: 1. Effective capacitance measured with power supply at 5V.
Table 6. DC Characteristics
(T
Note: 1. Outputs deselected.
Table 7. Power Down/Up Trip Points DC Characteristics
(T
Note: 1. All voltages referenced to V
A
A
A
Symbol
Symbol
Symbol
C
I
t
V
V
V
I
DR
= 25 °C)
= 0 to 70 °C or –40 to 85 °C; V
LO
= 0 to 70 °C or –40 to 85 °C)
I
I
V
V
V
LI
V
C
I
V
IO
CC1
CC2
IL
2. Sampled only, not 100% tested.
3. Outputs deselected.
2. Negative spikes of –1V allowed for up to 10ns once per cycle.
2. At 25 °C.
PFD
PFD
CC
OH
OL
SO
SO
IH
IN
(1)
(1)
(2)
(2)
(3)
Input Capacitance
Input / Output Capacitance
Input Leakage Current
Output Leakage Current
Supply Current
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Power-fail Deselect Voltage (M48Z35AY)
Power-fail Deselect Voltage (M48Z35AV)
Battery Back-up Switchover Voltage (M48Z35AY)
Battery Back-up Switchover Voltage (M48Z35AV)
Expected Data Retention Time
(1, 2)
Parameter
Parameter
SS
.
Parameter
CC
= 4.5V to 5.5V or 3.0v to 3.6V)
0V
Test Condition
E = V
0V
Outputs open
I
I
OL
OH
E = V
V
Test Condition
= 2.1mA
V
CC
= –1mA
OUT
IN
V
V
– 0.2V
OUT
IH
IN
(1)
V
V
= 0V
CC
= 0V
CC
Min
4.2
2.7
10
V
PFD
–0.3
Min
2.2
2.4
4.35
Typ
– 100mV
2.9
3.0
M48Z35AY, M48Z35AV
Min
V
CC
Max
0.8
0.4
±1
±5
50
Max
3
3
+ 0.3
10
10
Max
4.5
3.0
YEARS
Unit
Unit
Unit
mA
mA
mA
pF
pF
µA
µA
V
V
V
V
V
V
V
V
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