2SK3586 Fuji Electric, 2SK3586 Datasheet
2SK3586
Manufacturer Part Number
2SK3586
Description
N CHANNEL SILICON POWER MOSFET
Manufacturer
Fuji Electric
Datasheet
1.2SK3586.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3586-01
Manufacturer:
FUJITSU
Quantity:
12 500
Part Number:
2SK3586-01
Manufacturer:
FUJI/富士电机
Quantity:
20 000
www.fujielectric.co.jp/denshi/scd
2SK3586-01
FUJI POWER MOSFET
Super FAP-G Series
*1 L=223µH, Vcc=48V
*4 V
Thermalcharacteristics
Item
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Thermal resistance
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-repetitive Avalanche current
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Item
Electrical characteristics (T
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
DS
< =
100V
off
on
*5 V
GS
=-30V
*2 Tch 150°C
= <
c
=25°C unless otherwise specified)
V
V
I
I
V
I
E
dV
dV/dt
P
T
T
D
D(puls]
AS *2
Symbol
ch
stg
DSX *5
AS *1
D
DS
GS
DS
*3 I
R
R
Symbol
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
I
V
t
Q
GSS
AV
th(ch-c)
th(ch-a)
Ta=25 °C
Tc=25 °C
f
I
r
rr
/dt
fs
GS(th)
DSS
*3
(BR)DSS
DS(on)
iss
oss
rss
G
GS
SD
GD
rr
(on)
(off)
F
= <
*4
-I
D
, -di/dt=50A/µs, Vcc BV
Absolute maximum ratings
Ratings
-55 to +150
Test Conditions
Test Conditions
I
I
V
V
f=1MHz
V
V
R
V
I
V
L=100 H T
I
I
-di/dt=100A/µs
V
V
V
I
I
channel to ambient
channel to case
D
D
D
F
F
D
D
±200
+150
DS
GS
CC
GS
GS
GS
DS
DS
GS
CC
=50A V
=50A V
= 250 µ A
= 250 µ A
=50A
=25A
=25A
100
±50
±30
465
135
=10
70
50
20
=100V V
=80V V
=75V
=0V
=48V I
=10V
=10V
=±30V
=50V
5
2.02
V
V
GS
GS
ch
D
GS
DS
V
= <
GS
=0V T
=25A
=0V
=25°C
DS
GS
V
V
=10V
=25V
=0V
DS
GS
=0V
=0V
T
DSS
=V
=0V
ch
N-CHANNEL SILICON POWER MOSFET
ch
=25°C
kV/µs
kV/µs
W
°C
°C
Unit
, Tch 150°C
mJ
GS
V
V
A
A
V
A
=25°C
T
T
= <
ch
ch
=125°C
=25°C
TO-220AB
Outline Drawings
Equivalent circuit schematic
Gate(G)
Min.
Min.
100
15
50
3.0
1830
Typ.
Typ.
460
10
19
30
38
20
35
50
23
52
16
18
1.10
0.1
0.4
Source(S)
Drain(D)
2745
Max.
(mm)
250
100
690
62.0
Max.
25
25
57
30
53
75
35
78
24
27
0.926
5.0
1.65
Units
Units
°C/W
°C/W
ns
V
V
µA
nA
m
S
pF
nC
A
V
µs
µC
1
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2SK3586 Summary of contents
Page 1
... FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic (Tc=25°C unless otherwise specified) Item Symbol Drain-source voltage DSX *5 ...
Page 2
... Characteristics Allowable Power Dissipation PD=f(Tc) 200 175 150 125 100 Typical Output Characteristics ID=f(VDS):80µs Pulse test,Tch=25°C 200 20V 160 120 VDS [V] Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C 100 10 1 0.1 0 [A] Maximum Avalanche Energy vs ...
Page 3
... Drain-Source On-state Resistance RDS(on)=f(Tch):ID=25A,VGS=10V max typ -50 - Tch [ C] Typical Gate Charge Characteristics VGS=f(Qg):ID=50A, Tch=25° Vcc= 50V [nC] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs Pulse test,Tch=25°C ...
Page 4
... Transient Thermal Impedance Zth(ch-c)=f(t):D Maximum Avalanche Current Pulsewidth I =f(t ):starting Tch=25°C. Vcc=48V Single Pulse [sec ...