IRFR9024N

Manufacturer Part NumberIRFR9024N
DescriptionPower MOSFET
ManufacturerIRF
IRFR9024N datasheet
 


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Ultra Low On-Resistance
P-Channel
Surface Mount (IRFR9024N)
Straight Lead (IRFU9024N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
I
Pulsed Drain Current
DM
P
@T
= 25°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
Junction-to-Case
JC
R
Junction-to-Ambient (PCB mount)**
JA
R
Junction-to-Ambient
JA
IRFR/U9024N
PRELIMINARY
HEXFET
D
G
S
D -P a k
T O -2 52 A A
@ -10V
GS
@ -10V
GS
-55 to + 150
300 (1.6mm from case )
Typ.
–––
–––
–––
PD - 9.1506
®
Power MOSFET
V
= -55V
DSS
R
= 0.175
DS(on)
I
= -11A
D
I-P a k
TO -2 5 1 A A
Max.
Units
-11
-8
A
-44
38
W
0.30
W/°C
± 20
V
62
mJ
-6.6
A
3.8
mJ
-10
V/ns
°C
Max.
Units
3.3
50
°C/W
110
6/26/97

IRFR9024N Summary of contents

  • Page 1

    ... Ultra Low On-Resistance P-Channel Surface Mount (IRFR9024N) Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ...

  • Page 2

    ... Intrinsic turn-on time is negligible (turn-on is dominated by L Pulse width This is applied for I-PAK, L lead and center of die contact Uses IRF9Z24N data and test conditions (BR)DSS Conditions ––– 0V -250µ ...

  • Page 3

    ... V 20µs PULSE WIDTH 0 Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics ° 10 100 ° 150 -25V IRFR/U9024N 100 VGS TOP -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V 10 -4.5V 1 20µs PULSE WIDTH T = 150 C J 0.1 0 Drain-to-Source Voltage (V) DS Fig 2 ...

  • Page 4

    ... IRFR/U9024N Drain-to-Source V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 ° ...

  • Page 5

    ... SINGLE PULSE 0.02 (THERMAL RESPONSE) 0.01 0.1 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 125 150 ° 0.001 t , Rectangular Pulse Duration (sec) 1 IRFR/U9024N D.U. -10V Pulse Width µs Duty Factor Fig 10a. Switching Time Test Circuit d(on ...

  • Page 6

    ... IRFR/U9024N 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G -10V Charge Fig 13a. Basic Gate Charge Waveform 120 - 100 ...

  • Page 7

    ... Fig 14. For P-Channel HEXFETS + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - dv/dt controlled controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Forward Drop 5% IRFR/U9024N + + *** V =10V ...

  • Page 8

    ... IRFR/U9024N Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250 5.46 (.215) 5.21 (.205) 4 1.02 (.040 1.64 (.025) 1.52 (.060) 1.15 (.045) 1.14 (.045) 2X 0.76 (.030) 2.28 (.090) Part Marking Information TO-252AA (D-Pak 120 LOT ...

  • Page 9

    ... 0.58 (.023) 0.46 (.018 IRFR/U9024N 2.38 (.094) 2.19 (.086) 0.58 (.023) 0.46 (.018) LEAD AS SIG NMENT DRA IN 6.45 (.245 OURCE 5.68 (.224 DRA IN NOT DIME NSIO NING & T OLE RANCING NSI Y14.5M, 1982. ...

  • Page 10

    ... IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com . . ...