2SK2370 NEC, 2SK2370 Datasheet

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2SK2370

Manufacturer Part Number
2SK2370
Description
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Manufacturer
NEC
Datasheet

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Document No. TC-2507
Date Published January 1995 P
Printed in Japan
(O. D. No. TC-8066)
DESCRIPTION
tor designed for high voltage switching applications.
FEATURES
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage(2SAK2369/2370) V
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
* PW
** Starting T
The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transis-
Low On-Resistance
Low C
High Avalanche Capability Ratings
2SK2369: R
2SK2370: R
iss
10 s, Duty Cycle
ch
C
= 25 ˚C, R
iss
DS(on)
DS(on)
= 2400 pF TYP
= 0.35
= 0.4
G
c
A
= 25
= 25 ˚C)
= 25 ˚C)
1 %
N-CHANNEL POWER MOS FET
(V
(V
.
GS
, V
GS
= 10 V, I
GS
= 10 V, I
= 20 V
DATA SHEET
INDUSTRIAL USE
V
I
I
P
P
T
T
I
E
A
D(DC)
D(pulse)
AS
DSS
GSS
T1
T2
ch
stg
AS
D
= 25 ˚C)
SWITCHING
D
= 10 A)
= 10 A)
2SK2369/2SK2370
MOS FIELD EFFECT TRANSISTORS
–55 to +150 ˚C
0
450/500
140
150
285
3.0
20
30
20
80
mJ
W
W
˚C
V
A
A
A
V
2.2 ± 0.2
5.45
PACKAGE DIMENSIONS
15.7 MAX
1
Gate
2
(in millimeters)
3
4
1.0 ± 0.2
5.45
MP-88
Source
Drain
3.0 ± 0.2
0.6 ± 0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Body
Diode
©
4.7 MAX.
1.5
2.8 ± 0.1
1995

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2SK2370 Summary of contents

Page 1

... DESCRIPTION The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transis- tor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2369 0.35 DS(on) 2SK2370 0.4 DS(on) • Low 2400 pF TYP iss iss • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (T Drain to Source Voltage(2SAK2369/2370) V Gate to Source Voltage ...

Page 2

... Q 3 Test Circuit 2 Switching Time D.U. PG 1us Duty Cycle 1 % 2SK2369/2SK2370 TEST CONDITIONS 2SK2369 2SK2370 DSS ...

Page 3

... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140 120 100 140 160 20 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 000 2SK2369/2SK2370 100 120 140 160 T - Case Temperature - (˚ Drain to Source Voltage - (V) 3 ...

Page 4

... GATE TO SOURCE VOLTAGE 2 Pulsed 2.0 1.5 1.0 0.5 100 GATE TO SOURCE CUT OFF VOLTAGE vs. CHANNEL TEMPERATURE 4.0 3.5 3.0 2.5 2 1.5 1.0 100 –50 –25 T 2SK2369/2SK2370 = 41.7 ˚C/W = 0.89 ˚C ˚C C Single Pulse 100 1 000 Pulsed Gate to Source Voltage - ( ...

Page 5

... iss 100 C oss 10 rss 1.0 1 000 0.1 1 Drain Current - (A) D DYNAMIC INPUT/OUTPUT CHARACTERISTICS 500 400 300 200 100 100 2SK2369/2SK2370 1.0 1 (off (on 150 100 ...

Page 6

... 150 V DD 200 100 100 125 150 Starting Channel Temperature - (˚C) 6 SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 100 1.0 0 175 100 2SK2369/2SK2370 V = 150 100 Inductive Load - (H) ...

Page 7

... Safe operating area of Power MOS FET. The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2SK2369/2SK2370 Document No. TEI-1202 IEI-1209 ...

Page 8

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2SK2369/2SK2370 M4 94.11 ...

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