QM20 Mitsubishi Electric Semiconductor, QM20 Datasheet - Page 2

• Manufacturer Part Number: QM20
• Description: MEDIUM POWER SWITCHING USE INSULATED TYPE
• Manufacturer: Mitsubishi Electric Semiconductor

ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
V
V
V
V
I
–I
P
I
–I
V
V
E
I
I
I
T
T
V
I
I
I
V
V
–V
h
t
t
t
R
R
R
I
V
R
R
C
B
O
FSM
2 t
CEX
CBO
EBO
RRM
on
s
f
j
stg
FE
CEX (SUS)
CEX
CBO
EBO
C
RRM
RSM
a
iso
CE (sat)
BE (sat)
FM
th (j-c) Q
th (j-c) R
th (c-f)
th (j-c)
th (c-f)
C
CSM
Symbol
Symbol
Symbol
Symbol
Symbol
CEO
—
—
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge (non-repetitive) forward current
I
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Repetitive peak reverse current
Forward voltage
Thermal resistance
Contact thermal resistance
2 t
for fusing
Parameter
Parameter
Parameter
Parameter
Parameter
(Inverter part, T
(Converter part, T
I
V
Emitter open
Collector open
DC
DC (forward diode current)
T
DC
Peak value of one cycle of 60Hz (half wave)
Three phase full wave rectifying circuit, T
One half cycle at 60 Hz, peak value
Value for one cycle of surge current
Charged part to case, AC for 1 minute
Mounting screw M5
Typical value
V
V
V
I
–I
I
V
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
Conductive grease applied
V
I
Junction to case
Case to fin, conductive grease applied
(Inverter part, T
C
(Converter part, T
(Common)
C
C
F
C
EB
CE
CB
EB
CC
R
=30A
C
=1A, V
=20A, I
=20A, V
=25 C
=V
=20A (diode forward voltage)
=2V
=600V, V
=7V
=600V, Emitter open
=300V, I
RRM
EB
B
, T
CE
=80mA
=2V
=2V
j
C
=150 C
EB
=20A, I
=2V
j
=25 C)
j
=25 C)
j
=25 C)
B1
j
=25 C)
=120mA,–I
Test conditions
Test conditions
Conditions
Conditions
Conditions
B2
=0.4A
c
=79 C
MITSUBISHI TRANSISTOR MODULES
MEDIUM POWER SWITCHING USE
Min.
Min.
250
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.47~1.96
–40~150
–40~125
Ratings
Ratings
Ratings
15~20
Limits
Limits
2500
Typ.
Typ.
600
600
600
200
800
900
220
300
375
125
20
20
83
30
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
QM20KD-HB
7
1
INSULATED TYPE
Max.
Max.
0.35
0.35
1.0
1.0
2.0
2.5
1.5
1.5
2.0
1.5
2.5
5.0
1.3
0.9
40
12
—
kg·cm
Feb.1999
Unit
Unit
Unit
N·m
Unit
Unit
A
mA
mA
mA
C/ W
C/ W
C/ W
mA
C/ W
C/ W
W
—
V
V
V
V
A
A
A
A
V
V
V
A
A
V
g
V
V
V
V
2
C
C
s
s
s
s