QM20 Mitsubishi Electric Semiconductor, QM20 Datasheet - Page 4

• Manufacturer Part Number: QM20
• Description: MEDIUM POWER SWITCHING USE INSULATED TYPE
• Manufacturer: Mitsubishi Electric Semiconductor

10
10
10
10
10
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
FORWARD BIAS SAFE OPERATING AREA
–1
3
2
7
5
4
3
2
7
5
4
3
10
7
5
3
2
7
5
3
2
7
5
3
2
0
10
1
0
10
COLLECTOR-EMITTER VOLTAGE V
2
1
0
10
TRANSIENT THERMAL IMPEDANCE
–1
0
–3
BASE REVERSE CURRENT –I
T
NON-PEPETITIVE
T
0
CHARACTERISTIC (TRANSISTOR)
C
C
2
2
2
=25°C
=25°C
SWITCHING TIME VS. BASE
2
3
3
3
T
T
j
j
=25°C
=125°C
3 4 5 7
5
5
5
CURRENT (TYPICAL)
7
7
7
10
10
10
1
–2
1
TIME (s)
2
2
10
3
3
0
5
5
7
7
t
t
V
I
I
s
B1
C
f
10
2 3
10
CC
=20A
=120mA
100µs
=300V
–1
2
2
2
4 5 7
3
3
B2
5
5
(A)
CE
7
7
10
(V)
10
10
1
3
0
100
10
10
10
50
40
30
20
10
90
80
70
60
50
40
30
20
10
COLLECTOR-EMITTER REVERSE VOLTAGE
0
0
7
5
4
3
2
7
5
4
3
2
REVERSE BIAS SAFE OPERATING AREA
2
1
0
COLLECTOR-EMITTER VOLTAGE V
0.4
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR
DISSIPATION
T
MITSUBISHI TRANSISTOR MODULES
COLLECTOR-EMITTER REVERSE
j
=125°C
100
CHARACTERISTICS) (TYPICAL)
20
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
MEDIUM POWER SWITCHING USE
0.8
T
T
200
j
j
=25°C
=125°C
40
300
60
1.2
–V
CEO
I
400
B2
80
=–3A
(V)
1.6
500
100 120
SECOND
BREAKDOWN
AREA
QM20KD-HB
600
I
B2
C
2.0
=–0.5A
INSULATED TYPE
( C)
700
140
CE
800
160
2.4
(V)
Feb.1999