AM29BL802CB-120RZE AMD [Advanced Micro Devices], AM29BL802CB-120RZE Datasheet - Page 28

• Manufacturer Part Number: AM29BL802CB-120RZE
• Description: 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

DC CHARACTERISTICS
CMOS Compatible
Notes:
1. The I
2. Maximum I
3. I
4. Automatic sleep mode enables the low power mode when addresses remain stable for t
5. 32-word average.
6. Not 100% tested.
26
Parameter
current is 3 µA.
CC
V
V
V
I
I
I
I
I
I
V
V
V
I
I
CC1
CC2
CC3
CC4
CC5
CC6
V
I
OH1
OH2
LIT
LO
LKO
LI
OL
IH
ID
IL
active while Embedded Erase or Embedded Program is in progress.
CC
current listed is typically less than 2 mA/MHz, with OE# at V
CC
Input Load Current
A9 Input Load Current
Output Leakage Current
V
(Notes 1, 2)
V
(Notes 2, 3, 6)
V
V
Reset (Note 2)
Automatic Sleep Mode
(Notes 2, 4)
V
(Notes 2, 5)
Input Low Voltage
Input High Voltage
Voltage for Autoselect and
Temporary Sector Unprotect
Output Low Voltage
Output High Voltage
Low V
4)
CC
CC
CC
CC
CC
specifications are tested with V
Active Read Current
Active Write Current
Standby Current (Note 2)
Standby Current During
Burst Mode Read Current
CC
Lock-Out Voltage (Note
Description
CC
V
V
V
V
V
CE# = V
CE# = V
CE#, RESET# = V
RESET# = V
V
V
CE# = V
OE# = V
V
I
I
I
D A T A
OL
OH
OH
IN
CC
CC
OUT
CC
IH
IL
CC
= V
= V
= 4.0 mA, V
= V
= V
=
=
= V
= V
= V
= 3.3 V
= V
Am29BL802C
–
–
CC
SS
SS
CC
2.0 mA, V
100 µA, V
Test Conditions
CC max
CC max
CC max
IL,
IL,
IL,
IH
max.
SS
± 0.3 V
to 5.5 V,
± 0.3 V;
OE# = V
OE# = V
to 5.5 V,
SS
S H E E T
; A9 = 12.5 V
CC
± 0.3 V
CC
CC
CC
= V
IH
IH
= V
= V
, 5 MHz
±0.3 V
OE# = V
OE# = V
CC min
IH
25 MHz
33 MHz
40 MHz
CC min
CC min
. Typical V
IH
IL
CC
0.85 x V
0.7 x V
V
CC
is 3.0 V.
–0.5
11.5
Min
2.3
–0.4
ACC
CC
CC
22371C7 November 3, 2006
+ 30 ns. Typical sleep mode
Typ
20
15
20
25
9
3
3
3
8
Max
12.5
0.45
±1.0
±1.0
0.8
5.5
2.5
35
16
30
10
10
10
20
30
35
40
Unit
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V