AM29BL802CB-120RZE AMD [Advanced Micro Devices], AM29BL802CB-120RZE Datasheet - Page 43

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AM29BL802CB-120RZE

Manufacturer Part Number
AM29BL802CB-120RZE
Description
8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
Manufacturer
AMD [Advanced Micro Devices]
Datasheet
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
6. The device has a minimum erase and program cycle endurance of 1 million cycles.
LATCHUP CHARACTERISTICS
Includes all pins except V
SSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
DATA RETENTION
* For reference only. BSC is an ANSI standard for Basic Space Centering.
November 3, 2006 22371C7
Parameter
Sector Erase Time
Chip Erase Time
Word Programming Time
Chip Programming Time (Note 3)
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
Parameter
Minimum Pattern Data Retention Time
CC
programming typicals assume checkerboard pattern.
Table 4 for further information on command definitions.
Parameter
Current
Symbol
C
C
C
OUT
IN2
IN
A
= 25°C, f = 1.0 MHz.
CC
. Test conditions: V
Description
Control Pin Capacitance
Parameter Description
SS
SS
Output Capacitance
Input Capacitance
on all pins except I/O pins
on all I/O pins
CC
= 3.0 V, 100,000 cycles.
CC
D A T A
= 3.0 V, one pin at a time.
Typ (Note 1)
Am29BL802C
45
5
9
9
S H E E T
Max (Note 2)
Test Conditions
360
°
15
27
C, 3.0 V V
150°C
125°C
Test Setup
V
V
V
OUT
IN
IN
–100 mA
–1.0 V
–1.0 V
= 0
= 0
Min
= 0
CC
, 100,000 cycles. Additionally,
Unit
µs
s
s
s
Min
10
20
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
Typ
8.5
7.5
6
Comments
V
CC
+100 mA
12.5 V
Max
Max
+ 1.0 V
7.5
12
9
Years
Years
Unit
Unit
pF
pF
pF
41

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