AM28F512-120ECB AMD [Advanced Micro Devices], AM28F512-120ECB Datasheet - Page 17

• Manufacturer Part Number: AM28F512-120ECB
• Description: 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

Notes:
1. See AC and DC Characteristics for values of V
2. Program Verify is performed only after byte programming. A final read/compare may be performed (optional) after the register
Standby
Write
Standby
Write
Standby
Read
Standby
Write
Standby
switchable. When V
is written with the read command.
Bus Operations
PP
is switched, V
Program Setup
Program
Program-Verify (Note 2)
Reset
Table 5. Flashrite Programming Algorithm
PPL
Command
may be ground, no connect with a resistor tied to ground, or less than V
PP
parameters. The V
Am28F512
Wait for V
Initialize Pulse counter
Data = 40h
Valid Address/Data
Duration of Programming Operation (t
Data = C0h Stops Program Operation
Write Recovery Time before Read = 6 µs
Read Byte to Verify Programming
Compare Data Output to Data Expected
Data = FFh, resets the register for read operations.
Wait for V
PP
power supply can be hard-wired to the device or
PP
PP
Ramp to V
Ramp to V
Comments
PPH
PPL
(Note 1)
(Note 1)
WHWH1
)
CC
+ 2.0 V.
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