AM28F512-120ECB AMD [Advanced Micro Devices], AM28F512-120ECB Datasheet - Page 31

• Manufacturer Part Number: AM28F512-120ECB
• Description: 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. 25°C, 12 V V
2. Maximum time specified is lower than worst case. Worst case is derived from the Flasherase/Flashrite pulse count
LATCHUP CHARACTERISTICS
PIN CAPACITANCE
Note: Sampled, not 100% tested. Test conditions T
DATA RETENTION
Chip Erase Time
Chip Programming Time
Write/Erase Cycles
Input Voltage with respect to V
Input Voltage with respect to V
Current
Includes all pins except V
Minimum Pattern Data Retention Time
Parameter
(Flasherase = 1000 max and Flashrite = 25 max). Typical worst case for program and erase is significantly less than the actual
device limit.
Symbol
C
C
C
OUT
IN2
IN
Parameter
PP
.
Input Capacitance
Output Capacitance
V
PP
Input Capacitance
Parameter Description
CC
Parameter
. Test conditions: V
SS
SS
10,000
Min
on all pins except I/O pins (Including A9 and V
on all pins I/O pins
Parameter
(Note 1)
Typ
1
1
CC
Limits
A
= 5.0 V, one pin at a time.
= 25°C, f = 1.0 MHz.
(Note 2)
Max
10
Am28F512
6
V
V
V
IN
OUT
PP
= 0
= 0
= 0
Cycles
Test Conditions
Unit
sec
sec
Test Conditions
150°C
125°C
Excludes 00H programming prior to erasure
Excludes system-level overhead
PP
)
Comments
–100 mA
–1.0 V
–1.0 V
Typ
Min
Min
8
8
8
10
20
Max
10
12
12
V
CC
+100 mA
13.5 V
Years
Years
Max
Unit
+ 1.0 V
Unit
pF
pF
pF
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