MG400Q1US11 TOSHIBA Semiconductor CORPORATION, MG400Q1US11 Datasheet

MG400Q1US11

Manufacturer Part Number

MG400Q1US11

Description

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.MG400Q1US11.pdf (6 pages)

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High Power & High Speed Switching

Applications

•

Equivalent Circuit

Maximum Ratings

High input impedance

Enhancement-mode

The electrodes are isolated from case.

Collector-emitter voltage

Gate-emitter voltage

Collector current

Forward current

Collector power dissipation

(Tc = 25°C)

Junction temperature

Storage temperature range

Isolation voltage

Screw torque

Characteristics

G (B)

Mounting

(Ta = 25°C)

Terminal

1 ms

TOSHIBA IGBT Module Silicon N Channel IGBT

MG400Q1US65H

Symbol

CES

GES

⎯

Isol

stg

http://store.iiic.cc/

(AC 1 minute)

−40 to 125

Rating

1200

2650

2500

±20

400

800

400

800

150

Weight: 465 g (typ.)

JEDEC

JEITA

TOSHIBA

24 0.3 20 0.3

Unit

N·m

°C

22.5 0.6

108 0.8

106 0.8

2–M4

80 0.8

93 0.3

29 0.3

6 0.5

22.5 0.6

2–M6

2-109F1A

MG400Q1US65H

4–

―

JAPAN

6.6

0.3

2003-12-19

54 0.6

60 0.8

Unit: mm

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