SI7380DP-T1 Vishay Semiconductors, SI7380DP-T1 Datasheet

SI7380DP-T1

Manufacturer Part Number

SI7380DP-T1

Description

Manufacturer

Vishay Semiconductors

Datasheet

1.SI7380DP-T1.pdf (6 pages)

Specifications of SI7380DP-T1

Date_code

08+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI7380DP-T1-GE3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Current page: 1 of 6
Download datasheet (82Kb)

Notes

Document Number: 72025

S-21779—Rev. A, 07-Oct-02

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current (10 ms Pulse Width)

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

Surface Mounted on 1” x 1” FR4 Board.

(V)

6.15 mm

t A bi

0.00325 @ V

0.004 @ V

PowerPAK SO-8

DS(on)

= 150_C)

Bottom View

Parameter

(W)

= 4.5 V

= 10 V

N-Channel 30-V (D-S) MOSFET

Ordering Information: Si7380DP-T1

5.15 mm

(A)

Steady State

t v 10 sec

= 25_C

= 70_C

= 25_C

= 70_C

D TrenchFETr Power MOSFET

D PWM Optimized

D New Low Thermal Resistance PowerPAKr Package with

D DC/DC Converters

D Secondary Synchronous Rectifier

Symbol

Low 1.07-mm Profile

–

, T

thJC

thJA

Low-Side MOSFET in Synchronous Buck in Desktops

stg

10 secs

Typical

N-Channel MOSFET

4.5

5.4

3.4

1.0

–55 to 150

"12

Steady State

Maximum

Vishay Siliconix

1.6

1.9

1.2

1.5

Si7380DP

www.vishay.com

Unit

_C/W

C/W

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