R1RP0416DSB-2LR Renesas Electronics Corporation., R1RP0416DSB-2LR Datasheet

R1RP0416DSB-2LR

Manufacturer Part Number

R1RP0416DSB-2LR

Description

Manufacturer

Renesas Electronics Corporation.

Datasheets

1.R1RP0416DSB-2LR.pdf (15 pages)

2.R1RP0416DSB-2LR.pdf (15 pages)

Specifications of R1RP0416DSB-2LR

Date_code

10+

Current page: 1 of 15
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R1RP0416D Series

4M High Speed SRAM (256-kword

Description

The R1RP0416D Series is a 4-Mbit high speed static RAM organized 256-k word

high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit

designing technology. It is most appropriate for the application which requires high speed, high density

memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in

400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.

Features

Ordering Information

Type No.

R1RP0416DGE-2PR

R1RP0416DGE-2LR

R1RP0416DSB-2PR

R1RP0416DSB-2LR

Rev.1.00, Mar.12.2004, page 1 of 13

Single 5.0 V supply: 5.0 V

Access time: 12 ns (max)

Completely static memory

Equal access and cycle times

Directly TTL compatible

Operating current: 160 mA (max)

TTL standby current: 40 mA (max)

CMOS standby current : 5 mA (max)

Data retention current: 0.5 mA (max) (L-version)

Data retention voltage: 2 V (min) (L-version)

Center V

No clock or timing strobe required

All inputs and outputs

and V

type pin out

: 1.0 mA (max) (L-version)

Access time

12 ns

10%

16-bit)

Package

400-mil 44-pin plastic SOJ (44P0K)

400-mil 44-pin plastic TSOPII (44P3W-H)

16-bit. It has realized

REJ03C0108-0100Z

Mar.12.2004

Rev. 1.00

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