K4T1G164QE-HCF7 Samsung, K4T1G164QE-HCF7 Datasheet - Page 21

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K4T1G164QE-HCF7

Manufacturer Part Number
K4T1G164QE-HCF7
Description
Manufacturer
Samsung
Datasheet

Specifications of K4T1G164QE-HCF7

Date_code
10+
K4T1G044QE
K4T1G084QE
K4T1G164QE
Parameter
Four Activate Window for 1KB page size products
Four Activate Window for 2KB page size products
CAS to CAS command delay
Write recovery time
Auto precharge write recovery + precharge time
Internal write to read command delay
Internal read to precharge command delay
Exit self refresh to a non-read command
Exit self refresh to a read command
Exit precharge power down to any command
Exit active power down to read command
Exit active power down to read command
(slow exit, lower power)
CKE minimum pulse width (HIGH and LOW pulse width)
ODT turn-on delay
ODT turn-on
ODT turn-on (Power-Down mode)
ODT turn-off delay
ODT turn-off
ODT turn-off (Power-Down mode)
ODT to power down entry latency
ODT power down exit latency
OCD drive mode output delay
Minimum time clocks remains ON after CKE asynchronously
drops LOW
DDR2-800
Symbol
min
max
tFAW
35
x
tFAW
45
x
tCCD
2
x
tWR
15
x
tDAL
WR + tnRP
x
WR + tnRP
tWTR
7.5
x
tRTP
7.5
x
tXSNR
tRFC + 10
x
tXSRD
200
x
tXP
2
x
tXARD
2
x
tXARDS
8 - AL
x
tCKE
3
x
tAOND
2
2
tAON
tAC(min)
tAC(max)+0.7
2*tCK(avg)
tAONPD
tAC(min)+2
tAC(min)+2
+tAC(max)+1
tAOFD
2.5
2.5
tAOF
tAC(min)
tAC(max)+0.6
2.5*tCK(avg)+
tAOFPD
tAC(min)+2
tAC(min)+2
tAC(max)+1
tANPD
3
x
tAXPD
8
x
tOIT
0
12
tIS+tCK(avg)
tIS+tCK(avg)
tDelay
x
+tIH
21 of 45
DDR2 SDRAM
DDR2-667
Units
Notes
min
max
37.5
x
ns
50
x
ns
2
x
nCK
15
x
ns
x
nCK
7.5
x
ns
24,32
7.5
x
ns
3,32
tRFC + 10
x
ns
200
x
nCK
2
x
nCK
2
x
nCK
7 - AL
x
nCK
3
x
nCK
2
2
nCK
tAC(min)
tAC(max)+0.7
ns
6,16,40
2*tCK(avg)
ns
+tAC(max)+1
2.5
2.5
nCK
17,45
tAC(min)
tAC(max)+0.6
ns
17,43,45
2.5*tCK(avg)+
ns
tAC(max)+1
3
x
nCK
8
x
nCK
0
12
ns
x
ns
+tIH
Rev. 1.1 December 2008
32
32
32
33
32
1
1,2
27
16
32
15

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