IRFR9024N International Rectifier Corp., IRFR9024N Datasheet

IRFR9024N

Manufacturer Part Number

IRFR9024N

Description

Manufacturer

International Rectifier Corp.

Datasheets

1.IRFR9024N.pdf (10 pages)

2.IRFR9024N.pdf (11 pages)

Specifications of IRFR9024N

Case

D-pak

Date_code

08+

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Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The D-Pak is designed for surface mounting using

vapor phase, infrared, or wave soldering techniques.

The straight lead version (IRFU series) is for through-

hole mounting applications. Power dissipation levels

up to 1.5 watts are possible in typical surface mount

applications.

Absolute Maximum Ratings

Thermal Resistance

dv/dt

STG

@ T

Ultra Low On-Resistance

P-Channel

Surface Mount (IRFR9024N)

Straight Lead (IRFU9024N)

Advanced Process Technology

Fast Switching

Fully Avalanche Rated

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient (PCB mount)**

Junction-to-Ambient

Parameter

PRELIMINARY

@ -10V

Typ.

300 (1.6mm from case )

–––

IRFR/U9024N

HEXFET

T O -2 52 A A

D -P a k

-55 to + 150

Max.

0.30

-6.6

± 20

-11

-44

-10

3.8

-8

TO -2 5 1 A A

Power MOSFET

I-P a k

DS(on)

Max.

110

3.3

DSS

= -11A

PD - 9.1506

= 0.175

= -55V

Units

°C/W

W/°C

V/ns

°C

6/26/97

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