IRFR9024N

Manufacturer Part NumberIRFR9024N
ManufacturerInternational Rectifier Corp.
IRFR9024N datasheets
 


Specifications of IRFR9024N

CaseD-pakDate_code08+
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Ultra Low On-Resistance
P-Channel
Surface Mount (IRFR9024N)
Straight Lead (IRFU9024N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
I
Pulsed Drain Current
DM
P
@T
= 25°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
Junction-to-Case
JC
R
Junction-to-Ambient (PCB mount)**
JA
R
Junction-to-Ambient
JA
IRFR/U9024N
PRELIMINARY
HEXFET
D
G
S
D -P a k
T O -2 52 A A
@ -10V
GS
@ -10V
GS
-55 to + 150
300 (1.6mm from case )
Typ.
–––
–––
–––
PD - 9.1506
®
Power MOSFET
V
= -55V
DSS
R
= 0.175
DS(on)
I
= -11A
D
I-P a k
TO -2 5 1 A A
Max.
Units
-11
-8
A
-44
38
W
0.30
W/°C
± 20
V
62
mJ
-6.6
A
3.8
mJ
-10
V/ns
°C
Max.
Units
3.3
50
°C/W
110
6/26/97