AM29F016-120EC Advanced Micro Devices, AM29F016-120EC Datasheet

AM29F016-120EC

Manufacturer Part Number

AM29F016-120EC

Description

Manufacturer

Advanced Micro Devices

Datasheet

1.AM29F016-120.pdf (36 pages)

Specifications of AM29F016-120EC

Case

TSOP48

Date_code

2006+

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Am29F016

16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only,

Sector Erase Flash Memory

DISTINCTIVE CHARACTERISTICS

GENERAL DESCRIPTION

The Am29F016 is a 16 Mbit, 5.0 Volt-only Flash memory

organized as 2 Megabytes of 8 bits each. The 2 Mbytes

of data is divided into 32 sectors of 64 Kbytes for flexible

erase capability. The 8 bits of data appear on DQ0–DQ7.

The Am29F016 is offered in 48-pin TSOP and 44-pin SO

packages. This device is designed to be programmed

in-system with the standard system 5.0 Volt V

12.0 Volt V

operations. The device can also be reprogrammed in

standard EPROM programmers.

The standard Am29F016 offers access times of 70

ns, 90 ns, 120 ns, and 150 ns, allowing high-speed

microprocessors to operate without wait states. To

eliminate bus contention, the device has separate

5.0 Volt

— Minimizes system level power requirements

Compatible with JEDEC-standards

— Pinout and software compatible with

— Superior inadvertent write protection

48-pin TSOP

44-pin SO

Minimum 100,000 write/erase cycles

guaranteed

High performance

— 70 ns maximum access time

Sector erase architecture

— Uniform sectors of 64 Kbytes each

— Any combination of sectors can be erased.

Group sector protection

— Hardware method that disables any combination

Embedded Erase Algorithms

— Automatically pre-programs and erases the chip

single-power supply Flash

Also supports full chip erase

of sector groups from write or erase operations

(a sector group consists of 4 adjacent sectors of

64 Kbytes each)

or any sector

FINAL

10% for read and write operations

is not required for program or erase

supply.

chip enable (CE), write enable (WE), and output

The Am29F016 is entirely command set compatible

with the JEDEC single-power supply Flash standard.

Commands are written to the command register using

standard microprocessor write timings. Register

contents serve as input to an internal state-machine

that controls the erase and programming circuitry.

Write cycles also internally latch addresses and data

needed for the programming and erase operations.

Reading data out of the device is similar to reading

from 12.0 Volt Flash or EPROM devices.

The Am29F016 is programmed by executing the pro-

gram command sequence. This will invoke the Embed-

enable (OE) controls.

Embedded Program Algorithms

— Automatically programs and verifies data at

Data Polling and Toggle Bit feature for

detection of program or erase cycle

completion

Ready/Busy output (RY/BY)

— Hardware method for detection of program or

Erase Suspend/Resume

— Supports reading or programming data to a

Low power consumption

— 25 mA typical active read current

— 30 mA typical program/erase current

Enhanced power management for standby

mode

— <1 A typical standby current

— Standard access time from standby mode

Hardware RESET pin

— Resets internal state machine to the read mode

specified address

erase cycle completion

sector not being erased

Publication# 18805

Issue Date: April 1997

Rev: D Amendment/0

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