2SK2414-Z NEC, 2SK2414-Z Datasheet
2SK2414-Z
Manufacturer Part Number
2SK2414-Z
Description
Manufacturer
NEC
Specifications of 2SK2414-Z
Date_code
05+
Packing_info
SOT-252
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<R>
Document No. D13193EJ4V0DS00 (4th edition)
Date Published August 2006 N CP(K)
Printed in Japan
DESCRIPTION
for high voltage switching applications.
FEATURES
•
•
•
•
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1 PW ≤ 10 µ s, Duty Cycle ≤ 1 %
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what." field.
The 2SK2414 is N-Channel MOS Field Effect Transistor designed
Low On-Resistance
Low C
Built-in G-S Gate Protection Diodes
High Avalanche Capability Ratings
R
R
2 Starting T
DS(on)1
DS(on)2
iss
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
: C
= 70 mΩ MAX. (V
= 95 mΩ MAX. (V
iss
= 860 pF TYP.
ch
= 25 ˚C, R
Note 1
Note 2
Note 2
C
A
= 25 ˚C)
= 25 ˚C)
N-CHANNEL POWER MOS FET
GS
GS
G
= 25 Ω, V
= 10 V, I
= 4 V, I
The mark <R> shows major revised points.
V
V
I
I
P
P
T
T
I
E
D(DC)
D(pulse)
AS
DSS
GSS
T1
T2
ch
stg
AS
D
DATA SHEET
D
= 5.0 A)
A
GS
= 5.0 A)
= 25
= 20 → 0 V
SWITCHING
–55 to +150 °C
MOS FIELD EFFECT TRANSISTOR
°
C)
150
±20
±10
±40
1.0
60
20
10
10
2SK2414, 2414-Z
mJ
°C
W
W
V
V
A
A
A
<R>
Note The depth of notch at the top of the fin is
1.1 ±0.2
MP-3Z (SURFACE MOUNT TYPE)
2.3 ±0.3
from 0 to 0.2 mm.
PACKAGE DIMENSIONS
Gate
Gate Protection
Diode
EQUIVALENT CIRCUIT
6.5 ±0.2
5.0 ±0.2
1
2.3
6.5 ±0.2
5.0 ±0.2
4.4 ±0.2
1 2 3
2
2.3
4
3
(Unit: mm)
4
MP-3
Note
2.3 ±0.3
0.5 ±0.1
Source
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Drain
2.3 ±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
2.3 ±0.2
Body
Diode
0.5 ±0.1
0.15 ±0.15
0.5 ±0.1
0.5 ±0.1
Note
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