KDS120E KEC(Korea Electronics), KDS120E Datasheet
KDS120E
Manufacturer Part Number
KDS120E
Description
Manufacturer
KEC(Korea Electronics)
Datasheet
1.KDS120E.pdf
(1 pages)
Specifications of KDS120E
Date_code
05+
Packing_info
SOT-523
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
KDS120E-RTK/P
Manufacturer:
KEC
Quantity:
3 988
Part Number:
KDS120E-RTK/P
Manufacturer:
KEC
Quantity:
20 000
1999. 11. 24
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
MAXIMUM RATING (Ta=25 )
Note : * Unit Rating. Total Rating=Unit Rating x 1.5
ELECTRICAL CHARACTERISTICS (Ta=25 )
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Small Package
Low Forward Voltage
Fast Reverse Recovery Time : t
Small Total Capacitance
CHARACTERISTIC
CHARACTERISTIC
Revision No : 1
SEMICONDUCTOR
: C
: ESM.
: V
rr
T
=1.6ns(Typ.).
F
=2.2pF (Typ.).
=0.92V (Typ.).
TECHNICAL DATA
SYMBOL
V
I
T
I
SYMBOL
V
FSM
P
I
T
FM
RM
O
stg
D
R
j
V
V
V
C
I
t
F(1)
F(2)
F(3)
R
rr
T
-55 150
RATING
300 *
100 *
100
150
2 *
85
80
I
I
I
V
V
I
F
F
F
F
=1mA
=10mA
=100mA
R
R
=10mA
=80V
=0, f=1MHz
TEST CONDITION
UNIT
mW
mA
mA
V
V
A
SILICON EPITAXIAL TYPE DIODE
Marking
2
MIN.
1
1. CATHODE 1
2. CATHODE 2
3. ANODE
-
-
-
-
-
-
E
B
KDS120E
3
TYP.
ESM
0.61
0.74
0.92
2.2
1.6
-
A 3
D
J
DIM
MAX.
A
B
C
D
E
G
H
J
1.20
0.5
4.0
4.0
-
-
2
MILLIMETERS
0.27+0.10/-0.05
3
1.60 0.10
0.85 0.10
0.70 0.10
1.60 0.10
1.00 0.10
0.13 0.05
0.50
+ _
+ _
+ _
+ _
+ _
+ _
1
UNIT
pF
nS
V
A
1/1
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