RN1104F TOSHIBA Semiconductor CORPORATION, RN1104F Datasheet

RN1104F

Manufacturer Part Number

RN1104F

Description

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.RN1104F.pdf (7 pages)

Specifications of RN1104F

Date_code

05+

Packing_info

SOT-523

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Bonase Electronics (HK) Co., Limited

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RN1104F

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BOSTOCK HK LIMITED

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RN1104F

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RN1104FT(TE85L)

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Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN2101F~RN2106F

Equivalent Circuit And Bias Resister Values

Maximum Ratings

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general

· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal

can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the

buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and

to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or

damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the

most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling

Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are

neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or

failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy

control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control

instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document

shall be made at the customer’s own risk.

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

Characteristic

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

(Ta = 25°C)

RN1101F~1106F

RN1101F~1104F

RN1105F, 1106F

RN1101F~1106F

RN1101F,RN1102F,RN1103F

RN1104F,RN1105F,RN1106F

RN1101F

RN1102F

RN1103F

RN1104F

RN1105F

RN1106F

Type No.

Symbol

R1 (kΩ)

CBO

CEO

EBO

stg

4.7

2.2

4.7

R2 (kΩ)

−55~150

4.7

Rating

100

150

JEDEC

EIAJ

TOSHIBA

Unit

Weight: 2.3 mg

°C

RN1101F~RN1106F

2001-02-08 1/7

2-2H1A

―

Unit in mm

000707EAA2

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