RN2963FS TOSHIBA Semiconductor CORPORATION, RN2963FS Datasheet

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RN2963FS

Manufacturer Part Number
RN2963FS
Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheets

Specifications of RN2963FS

Date_code
05+
Packing_info
SOT-563
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Equivalent Circuit and Bias Resistor Values
Maximum Ratings
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
Two devices are incorporated into a fine pitch Small Mold (6 pin)
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
Note: Total rating
Complementary to RN1961FS~RN1966FS
package.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
B
R1
Characteristics
C
E
(Ta = 25°C) (Q1, Q2 common)
RN2961FS,RN2962FS,RN2963FS,
RN2964FS,RN2965FS,RN2966FS
RN2961FS~2966FS
RN2961FS~2964FS
RN2961FS~2966FS
RN2965FS, 2966FS
RN2961FS
RN2962FS
RN2963FS
RN2964FS
RN2965FS
RN2966FS
Type No.
R1 (kΩ)
4.7
2.2
4.7
10
22
47
Symbol
V
V
V
P
T
CBO
CEO
EBO
C
I
1
T
stg
C
j
(Note)
R2 (kΩ)
4.7
10
22
47
47
47
−55~150
Rating
−20
−20
−10
−50
150
−5
50
RN2961FS~RN2966FS
Weight:0.001g (typ.)
JEDEC
JEITA
TOSHIBA
fS6
Unit
mW
0.1±0.05
mA
°C
°C
V
V
V
1.EMIITTER1
2.EMITTER2
3.BASE2
4.COLLECTOR2
5.BASE1
6.COLLECTOR1
Equivalent Circuit
(top view)
1
3
2
1.0±0.05
0.8±0.05
Q1
6
1
2-1F1C
2004-04-12
5
2
4
6
5
(E1)
(E2)
(B2)
(C2)
(B1)
(C1)
Unit: mm
0.1±0.05
Q2
4
3

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