SI9910DJE3 Vishay Semiconductors, SI9910DJE3 Datasheet

SI9910DJE3

Manufacturer Part Number

SI9910DJE3

Description

DIP8

Manufacturer

Vishay Semiconductors

Datasheet

1.SI9910DJE3.pdf (6 pages)

Specifications of SI9910DJE3

Date_code

10+

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DESCRIPTION

The Si9910 Power MOSFET driver provides optimized gate

drive signals, protection circuitry and logic level interface. Very

low quiescent current is provided by a CMOS buffer and a

high-current emitter-follower output stage. This efficiency

allows operation in high-voltage bridge applications with

“bootstrap” or “charge-pump”

techniques.

The non-inverting output configuration minimizes current

drain for an n-channel “on” state. The logic input is internally

diode clamped to allow simple pull-down in high-side drives.

Document Number: 70009

S-42043—Rev. H, 15-Nov-04

1. Patent Number 484116.

FEATURES

D dv/dt and di/dt Control

D Undervoltage Protection

D Short-Circuit Protection

FUNCTIONAL BLOCK DIAGRAM

INPUT

Delay

2-ms

D t

D Low Quiescent Current

D CMOS Compatible Inputs

Adaptive Power MOSFET Driver

Undervoltage/

Overcurrent

Protection

floating power supply

Shoot-Through Current Limiting

Fault protection circuitry senses an undervoltage or output

short-circuit condition and disables the power MOSFET.

Addition of one external resistor limits maximum di/dt of the

external Power MOSFET. A fast feedback circuit may be used

to limit shoot-through current during t

time) in a bridge configuration.

The Si9910 is available in both standard and lead (Pb)-free

8-pin plastic DIP and SOIC packages which are specified to

operate over the industrial temperature range of −40 _C to

85 _C.

D Compatible with Wide Range of MOSFET Devices

D Bootstrap and Charge Pump Compatible

(High-Side Drive)

PULL-DOWN

PULL-UP

DRAIN

SENSE

* Typical Values

*100 kW

*250 W

Vishay Siliconix

*2 to 5 pF

(diode reverse recovery

*0.1 W

www.vishay.com

Si9910

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