PTVS3-430C Bourns, Inc., PTVS3-430C Datasheet
PTVS3-430C
Manufacturer Part Number
PTVS3-430C
Description
3kA 430V Bidirectional PowerTVS Diode
Manufacturer
Bourns, Inc.
Specifications of PTVS3-430C
Pack_quantity
2
Lead_time
91
The PTVS3-xxxC range of high current bidirectional TVS diodes is
designed for use in AC line protection and high power DC bus
clamping applications. These devices offer bidirectional port protection
from 380 volts to 430 volts.
The devices are RoHS* and UL compliant while also meeting IEC
61000-4-5 8/20 µs current surge requirements.
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
Rating
Repetitive Standoff Voltage
Peak Current Rating per 8/20 µs IEC 61000-4-5
Operating Junction Temperature Range
Storage Temperature Range
Lead Temperature, Soldering (10 s)
Parameter
I
V
V
V
C Capacitance
D
General Information
Absolute Maximum Ratings (@ T
Electrical Characteristics (@ T
(BR)
C
(BR)
Standby Current
Clamping Voltage
Breakdown Voltage
Temperature Coeffi cient
A
= 25 °C Unless Otherwise Noted)
A
= 25 °C Unless Otherwise Noted)
Asia-Pacifi c: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116
Europe: Tel: +41-41 768 5555 • Fax: +41-41 768 5510
The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700
www.bourns.com
PTVS3-xxxC Series High Current TVS Diodes
Features
■
■
■
■
3 kA, 8/20 µs surge capability
Low clamping voltage under surge
Bidirectional TVS
UL Recognized
V
I
I
F = 10 kHz,
V
BR
PP
D
d
= 1 Vrms
= V
= 3 kA
= 10 mA
WM
Test Conditions
PTVS3-380C
PTVS3-430C
PTVS3-380C
PTVS3-430C
PTVS3-380C
PTVS3-430C
PTVS3-380C
PTVS3-430C
Min.
Symbol
401
440
V
I
PPM
T
T
WM
Applications
■
■
S
J
UL
AC line protection
High power DC bus protection
Agency Approval
Typ.
420
470
510
560
0.1
0.7
0.6
-40 to +125
-55 to +150
File Number: Pending
Value
380
430
260
Description
3
Max.
443
490
570
620
1.2
1.0
10
Unit
kA
°C
°C
°C
V
%/°C
Unit
µA
nF
V
V
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