IRF840STR VISHAY [Vishay Siliconix], IRF840STR Datasheet

no-image

IRF840STR

Manufacturer Part Number
IRF840STR
Description
Power MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF840STRLPBF
Manufacturer:
VISHAY
Quantity:
220
Part Number:
IRF840STRLPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
IRF840STRLPBF
Quantity:
12 000
Company:
Part Number:
IRF840STRLPBF
Quantity:
70 000
Company:
Part Number:
IRF840STRPBF
Quantity:
25 780
Company:
Part Number:
IRF840STRRPBF
Quantity:
70 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91071
S-81432-Rev. A, 07-Jul-08
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
Repetiitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 8.0 A, dI/dt ≤ 100 A/µs, V
= 50 V, starting T
G D
(Ω)
D
S
2
PAK (TO-263)
a
a
J
= 25 °C, L = 14 mH, R
c
a
b
DD
V
GS
≤ V
D
IRF840SPbF
SiHF840S-E3
IRF840S
SiHF840S
e
= 10 V
2
PAK (TO-263)
DS
G
, T
N-Channel MOSFET
e
Single
J
500
≤ 150 °C.
9.3
63
32
G
= 25 Ω, I
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
0.85
GS
AS
at 10 V
= 8.0 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
D
IRF840STRLPbF
SiHF840STL-E3
IRF840STR
SiHF840STL
= 100 °C
= 25 °C
2
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirement
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The SMD-220 is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The SMD-220 is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0 W
in a typical surface mount application.
PAK (TO-263)
a
L
a
SYMBOL
T
dV/dt
a
J
V
V
E
E
I
a
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
IRF840S, SiHF840S
design,
- 55 to + 150
D
IRF840STRRPbF
SiHF840STR-E3
IRF840STR
SiHF840STR
2
LIMIT
0.025
300
PAK (TO-263)
± 20
500
510
125
8.0
5.1
1.0
8.0
3.1
3.5
32
13
low
d
Vishay Siliconix
on-resistance
a
a
a
www.vishay.com
a
UNIT
W/°C
RoHS*
V/ns
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

Related parts for IRF840STR

IRF840STR Summary of contents

Page 1

... I = 8.0 A (see fig. 12 ≤ 150 ° IRF840S, SiHF840S Vishay Siliconix device design, low on-resistance 2 D PAK (TO-263 IRF840STRRPbF a a SiHF840STR- IRF840STR a a SiHF840STR SYMBOL LIMIT V 500 DS V ± 8 5 1.0 0.025 E 510 AS I 8.0 AR ...

Page 2

IRF840S, SiHF840S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER ...

Page 3

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91071 S-81432-Rev. A, 07-Jul- °C Fig Typical Transfer Characteristics C = 150 °C ...

Page 4

IRF840S, SiHF840S Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: ...

Page 5

Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91071 S-81432-Rev. A, 07-Jul-08 IRF840S, SiHF840S Vishay Siliconix D.U. ...

Page 6

IRF840S, SiHF840S Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. ...

Page 7

D.U. Driver gate drive D.U.T. I Reverse recovery current D.U.T. V Re-applied voltage Inductor current * V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data ...

Page 8

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

Related keywords