HY57V281620FLTP Hynix Semiconductor, HY57V281620FLTP Datasheet - Page 9

• Manufacturer Part Number: HY57V281620FLTP
• Description: Synchronous DRAM Memory 128Mbit (8Mx16bit)
• Manufacturer: Hynix Semiconductor

Rev. 1.2 / Oct. 2007
DC CHARACTERISTICS II
Note:
1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open
2. Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3. HY57V281620FTP Series: Normal Power
Operating Current
Precharge Standby Current
in Power Down Mode
Precharge Standby
Current in Non Power
Down Mode
Active Standby Current
in Power Down Mode
Active Standby Current
in Non Power Down Mode
Burst Mode Operating Cur-
rent
Auto Refresh Current
Self Refresh Current
HY57V281620FLTP Series: Low Power
HY57V281620FSTP Series: Super Low Power
Parameter
IDD1
IDD2P
IDD2PS CKE ≤ VIL(max), tCK = ∞
IDD2N
IDD2NS
IDD3P
IDD3PS CKE ≤ VIL(max), tCK = ∞
IDD3N
IDD3NS
IDD4
IDD5
IDD6
Symbol
Burst length=1, One bank active
tRC ≥ tRC(min), IOL=0mA
CKE ≤ VIL(max), tCK = 15ns
CKE ≥ VIH(min), CS ≥ VIH(min), tCK =
15ns
Input signals are changed one time dur-
ing 2clks.
All other pins ≥ VDD-0.2V or ≤ 0.2V
CKE ≥ VIH(min), tCK = ∞
Input signals are stable.
CKE ≤ VIL(max), tCK = 15ns
CKE ≥ VIH(min), CS ≥ VIH(min), tCK =
15ns
Input signals are changed one time dur-
ing 2clks.
All other pins ≥ VDD-0.2V or ≤ 0.2V
CKE ≥ VIH(min), tCK = ∞
Input signals are stable.
tCK ≥ tCK(min), IOL=0mA
All banks active
tRC ≥ tRC(min), All banks active
CKE ≤ 0.2V
(Commercial: TA = 0
Test Condition
o
C to 70
Super Low Power
Low power
o
Normal
C, Industrial: TA = -40
HY57V281620F(L/S)TP Series
120
120
210
5
o
110
110
200
C to 85
6
Speed
800
500
18
15
40
35
2
2
5
5
2
100
100
190
o
C)
7
100
100
190
H
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
1
1
2
3
9