IRF7523D1PBF

Manufacturer Part NumberIRF7523D1PBF
DescriptionMICRO8/30V FETKY - MOSFET AND SCHOTTKY DIODE IN A MICRO 8 PACKAGE
ManufacturerInternational Rectifier Corp.
IRF7523D1PBF datasheet
 


Specifications of IRF7523D1PBF

Lead_time84Pack_quantity80
AnalogIRFIRF7523D1Comm_code85412900
EccnEAR99  
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IRF7523D1
MOSFET Electrical Characteristics @ T
Parameter
V
Drain-to-Source Breakdown Voltage
(BR)DSS
R
Static Drain-to-Source On-Resistance
DS(on)
V
Gate Threshold Voltage
GS(th)
g
Forward Transconductance
fs
I
Drain-to-Source Leakage Current
DSS
I
Gate-to-Source Forward Leakage
GSS
Gate-to-Source Reverse Leakage
Q
Total Gate Charge
g
Q
Gate-to-Source Charge
gs
Q
Gate-to-Drain ("Miller") Charge
gd
t
Turn-On Delay Time
d(on)
t
Rise Time
r
t
Turn-Off Delay Time
d(off)
t
Fall Time
f
C
Input Capacitance
iss
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
MOSFET Source-Drain Ratings and Characteristics
Parameter
I
Continuous Source Current (Body Diode)
S
Pulsed Source Current (Body Diode)
I
SM
V
Body Diode Forward Voltage
SD
t
Reverse Recovery Time (Body Diode)
rr
Q
Reverse Recovery Charge
rr
Schottky Diode Maximum Ratings
Parameter
I
Max. Average Forward Current
F(av)
Max. peak one cycle Non-repetitive
I
SM
Surge current
Schottky Diode Electrical Specifications
Parameter
V
Max. Forward voltage drop
FM
I
Max. Reverse Leakage current
RM
C
Max. Junction Capacitance
t
dv/dt
Max. Voltage Rate of Charge
2
= 25°C (unless otherwise specified)
J
Min. Typ. Max. Units
Conditions
30
V
V
= 0V, I
GS
D
0.090 0.130
V
= 10V, I
GS
0.140 0.190
V
= 4.5V, I
GS
1.0
V
V
= V
, I
DS
GS
1.9
S
V
= 10V, I
DS
1.0
V
= 24V, V
DS
µA
25
V
= 24V, V
DS
-100
V
= -20V
GS
nA
100
V
= 20V
GS
7.8
12
I
= 1.7A
D
1.2
1.8
nC
V
= 24V
DS
2.5
3.8
V
= 10V (see figure 6)
GS
4.7
V
= 15V
DD
10
I
= 1.7A
D
ns
12
R
= 6.1
G
5.3
R
= 8.7
D
210
V
= 0V
GS
80
pF
V
= 25V
DS
32
ƒ = 1.0MHz (see figure 5)
Min. Typ. Max. Units
Conditions
1.25
A
21
1.2
V
T
= 25°C, I
J
40
60
ns
T
= 25°C, I
J
48
72
nC
di/dt = 100A/µs
Max. Units.
Conditions
1.9
50% Duty Cycle. Rectangular Wave, T
A
1.3
Fig.14
See
120
5µs sine or 3µs Rect. pulse
11
10ms sine or 6ms Rect. pulse load condition &
A
Max. Units
Conditions
0.50
I
= 1.0A, T
= 25°C
F
J
0.62
I
= 2.0A, T
= 25°C
F
J
V
0.39
I
= 1.0A, T
= 125°C
F
J
0.57
I
= 2.0A, T
= 125°C .
F
J
0.06
V
= 30V
T
= 25°C
R
J
mA
16
T
= 125°C
J
92
pF
V
= 5Vdc ( 100kHz to 1 MHz) 25°C
R
3600 V/ µs
Rated V
R
= 250µA
= 1.7A
D
= 0.85A
D
= 250µA
D
= 0.85A
D
= 0V
GS
= 0V, T
= 125°C
GS
J
= 1.7A, V
= 0V
S
GS
= 1.7A
F
= 25°C
A
T
= 70°C
A
Following any rated
with V
applied
RRM
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