SI7160DP Vishay Semiconductors, SI7160DP Datasheet
SI7160DP
Manufacturer Part Number
SI7160DP
Description
Manufacturer
Vishay Semiconductors
Datasheet
1.SI7160DP.pdf
(7 pages)
Specifications of SI7160DP
Date_code
05+/06+
Packing_info
SO-8
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7160DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. See Solder Profile (
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
Document Number: 74954
S-71284-Rev. A, 02-Jul-07
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
DS
30
Ordering Information: Si7160DP-T1-E3 (Lead (Pb)-free)
(V)
8
6.15 mm
D
N-Channel 30-V (D-S) MOSFET with Schottky Diode
0.0087 at V
0.010 at V
7
D
h
r
6
ttp://www.vishay.com/doc?73461). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
DS(on)
D
PowerPAK SO-8
Bottom View
5
GS
GS
D
(Ω)
J
= 4.5 V
= 10 V
= 150 °C)
b, f
1
S
2
S
3
I
D
S
20
20
5.15 mm
(A)
4
G
a
d, e
A
Q
= 25 °C, unless otherwise noted
Steady State
g
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
t ≤ 10 sec
21
C
C
A
A
C
A
C
C
A
A
(Typ)
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Ultra-Low On-Resistance Using High
• Q
• New Low Thermal Resistance PowerPAK
• 100 % R
• 100 % UIS Tested
• Notebook
Symbol
Symbol
T
R
R
Density TrenchFET
MOSFET Technology
Package with Low 1.07 mm Profile
- Logic DC/DC
J
V
V
E
I
I
P
, T
DM
I
I
AS
thJC
thJA
GS
DS
AS
g
D
S
D
stg
Optimized
g
Tested
Typical
3.4
20
N-Channel MOSFET
®
- 55 to 150
Gen II Power
17.8
14.2
4.5
3.2
Limit
± 16
27.7
17.7
5
260
20
20
20
30
60
20
20
b, c
G
b, c
b, c
a
a
b, c
b, c
a
Maximum
4.5
25
Vishay Siliconix
D
S
Si7160DP
www.vishay.com
®
Schottky Diode
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1
Related parts for SI7160DP
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Manufacturer:
Vishay Semiconductors
Datasheet:
Part Number:
Description:
Manufacturer:
Vishay Semiconductors
Datasheet:
Part Number:
Description:
Manufacturer:
Vishay Semiconductors
Datasheet:
Part Number:
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
Vishay Semiconductors
Datasheet:
Part Number:
Description:
Manufacturer:
Vishay Semiconductors
Datasheet:
Part Number:
Description:
DG406 Multiplexer Optimizes Medical Simulator
Manufacturer:
Vishay Semiconductors
Datasheet:
Part Number:
Description:
Manufacturer:
Vishay Semiconductors
Datasheet:
Part Number:
Description:
Charging of battaries with automatic pre-discharge
Manufacturer:
Vishay Semiconductors
Datasheet:
Part Number:
Description:
AN610PolarPAK Solder Joint Reliability Based on Thermal Fatigue IPC-9701
Manufacturer:
Vishay Semiconductors
Datasheet:
Part Number:
Description:
MicroPower Quad Comparator
Manufacturer:
Vishay Semiconductors
Datasheet:
Part Number:
Description:
Precision Monolithic Low-Voltage CMOS Analog Switches
Manufacturer:
Vishay Semiconductors
Datasheet:
Part Number:
Description:
Manufacturer:
Vishay Semiconductors
Datasheet: