TN2106K1 Supertex, TN2106K1 Datasheet
TN2106K1
Manufacturer Part Number
TN2106K1
Description
Manufacturer
Supertex
Datasheets
1.TN2106K1.pdf
(6 pages)
2.TN2106K1.pdf
(4 pages)
3.TN2106K1.pdf
(4 pages)
4.TN2106K1.pdf
(4 pages)
Specifications of TN2106K1
Date_code
05+
Packing_info
SOT-23
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TN2106K1
Manufacturer:
SUPERTEX
Quantity:
20 000
Part Number:
TN2106K1-G
Manufacturer:
SUPERTEX
Quantity:
20 000
Ordering Information
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Features
Applications
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
01/06/03
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Distance of 1.6 mm from case for 10 seconds.
BV
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
BV
60V
DSS
DGS
ISS
/
and fast switching speeds
R
(max)
2.5Ω
DS(ON)
V
(max)
2.0V
GS(th)
N-Channel Enhancement-Mode
Vertical DMOS FETs
TO-236AB*
TN2106K1
-55°C to +150°C
Order Number / Package
BV
BV
300°C
± 20V
DGS
DSS
TN2106N3
TO-92
1
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Note: See Package Outline section for dimensions.
TN2106ND
Die
TO-236AB
(SOT-23)
top view
G
D
S
where
Product marking for SOT-23:
Low Threshold
= 2-week alpha date code
N1L
TN2106
TO-92
S G D
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