TN2106 Supertex Inc, TN2106 Datasheet

TN2106

Manufacturer Part Number

TN2106

Description

N-Channel Enhancement-Mode Vertical DMOS FETs

Manufacturer

Supertex Inc

Datasheet

1.TN2106.pdf (4 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

TN2106K

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

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Part Number:

TN2106K1

Manufacturer:

SUPERTEX

Quantity:

20 000

Company:

H&T Electronics

Part Number:

TN2106K1

Quantity:

3 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

TN2106K1-G

Manufacturer:

SUPERTEX

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TN2106N3-G

Manufacturer:

MURATA

Quantity:

400 000

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Ordering Information

*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

Features

Applications

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

Distance of 1.6 mm from case for 10 seconds.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

Excellent thermal stability

Integral Source-Drain diode

High input impedance and high gain

Complementary N- and P-channel devices

Logic level interfaces – ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

60V

DSS

DGS

ISS

and fast switching speeds

(max)

2.5

DS(ON)

(max)

2.0V

GS(th)

N-Channel Enhancement-Mode

Vertical DMOS FETs

TO-236AB*

TN2106K1

-55 C to +150 C

Order Number / Package

300 C

20V

DGS

DSS

TN2106N3

TO-92

7-71

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Package Options

Note: See Package Outline section for dimensions.

TN2106ND

Die

Gate

TO-236AB

(SOT-23)

top view

Drain

Source

where

Product marking for SOT-23:

Low Threshold

= 2-week alpha date code

N1L

TN2106

TO-92

S G D

Related parts for TN2106

TN2106 Summary of contents

Page 1

... Package Options BV DSS BV DGS 20V - +150 C 300 C Note: See Package Outline section for dimensions. 7-71 TN2106 Low Threshold Product marking for SOT-23: N1L where = 2-week alpha date code Drain Gate Source TO-92 TO-236AB ...

Page 2

... I = 200mA 10V 500mA 10V 500mA 25V 500mA 0V 25V 1MHz 25V 0. GEN 8 1 0.5A 0.5A PULSE R gen INPUT TN2106 I DRM 0.8A 1. OUTPUT D.U.T. ...

Page 3

... Saturation Characteristics 2.5 2.0 1.5 1.0 0 (volts) DS Power Dissipation vs. Temperature 1.0 0.8 TO-92 0.6 0.4 SOT-23 0 100 125 Thermal Response Characteristics 1.0 TO-236AB 0 0.36W 0.6 TO- 0.4 0.2 0 0.001 0.01 0.1 1.0 t (seconds) p TN2106 10V 150 10 ...

Page 4

... V 1.2 1.0 0.8 0 ISS 7-74 On-Resistance vs. Drain Current 10V GS 0 0.5 1.0 1.5 2 (amperes) and R Variation with Temperature DS(ON ) GS(th 10V, 0.5A DS(ON 1mA GS(th 100 Gate Drive Dynamic Characteristics V = 10V 20V 0.6 0 0.2 0.4 0.8 Q (nanocoulombs) G TN2106 2.5 2.0 1.6 1.2 0.8 0.4 0 150 1.0 ...

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