VN2222 Supertex Inc, VN2222 Datasheet
VN2222
Manufacturer Part Number
VN2222
Description
N-Channel Enhancement-Mode Vertical DMOS FETs
Manufacturer
Supertex Inc
Datasheet
1.VN2222.pdf
(4 pages)
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Ordering Information
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Features
Applications
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
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BV
BV
220V
240V
DSS
DGS
ISS
/
and fast switching speeds
R
1.25Ω
1.25Ω
(max)
DS(ON)
N-Channel Enhancement-Mode
Vertical DMOS FETs
(min)
I
5.0A
5.0A
D(ON)
-55°C to +150°C
BV
300°C
BV
± 20V
DGS
DSS
VN2224N3
Order Number / Package
TO-92
—
1
Package Options
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
20-Pin C-Dip
VN2222NC
TO-92
S G D
—
G1
G2
G3
G4
S
S
S
S
S
S
10
20-pin Ceramic DIP
1
2
3
4
5
6
7
8
9
top view
VN2222
VN2224
20
19
18
17
16
15
14
13
12
11
S
S
NC
D1
D2
D3
D4
NC
S
S
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VN2222 Summary of contents
Page 1
... Package Options BV DSS BV DGS ± 20V TO-92 -55°C to +150°C 300°C Note: See Package Outline section for dimensions. 1 VN2222 VN2224 ...
Page 2
... V = 25V 10Ω GEN PULSE GENERATOR R gen INPUT VN2222/VN2224 DRM 540mA 5.0A = 5mA 5mA 5mA Max Rating DS = 0.8 Max Rating DS = 25V DS = 25V 25V ...
Page 3
... C 10 100 1000 3 Saturation Characteristics 10V (volts) DS Power Dissipation vs. Case Temperature 10 5 TO- 100 125 Thermal Response Characteristics 1.0 0.8 0.6 0.4 TO-92 0 0.001 0.01 0 (seconds) p VN2222/VN2224 8V 10 150 10 ...
Page 4
... 5mA R @ 10V 0.4 - 100 T (°C) j Gate Drive Dynamic Characteristics 10V 40V DS 6 733 300 (nanocoulombs) G 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com VN2222/VN2224 10 2.4 2.0 1.6 1.2 0.8 0.4 150 10 11/12/01 ...