VN2110K1 Supertex Inc, VN2110K1 Datasheet

VN2110K1

Manufacturer Part Number

VN2110K1

Description

N-Channel Enhancement-Mode Vertical DMOS FETs

Manufacturer

Supertex Inc

Datasheet

1.VN2110K1.pdf (4 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

VN2110K1

Manufacturer:

SUPERTEX

Quantity:

3 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

VN2110K1

Manufacturer:

SUTEX

Quantity:

20 000

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Features

❏ Commercial and Military versions available

❏ Free from secondary breakdown

❏ Low power drive requirement

❏ Ease of paralleling

❏ Low C

❏ High input impedance and high gain

Applications

❏ Motor controls

❏ Amplifiers

❏ Power supply circuits

❏ Converters

❏ Switches

❏ Drivers (relays, hammers, solenoids, lamps,

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

Ordering Information

†

*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

* Distance of 1.6 mm from case for 10 seconds.

MIL visual screening available

100V

60V

memories, displays, bipolar transistors, etc.)

DSS

DGS

/ R

ISS

(max)

4.0Ω

DS(ON)

and fast switching speeds

VN2106N3

TO-92

—

Order Number / Package

TO-236AB*

VN2110K1

–

N-Channel Enhancement-Mode

Vertical DMOS FETs

-55°C to +150°C

VN2110ND

300°C

± 20V

Die

—

DGS

DSS

†

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

Supertex vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Package Options

Note: See Package Outline section for dimensions.

where ❋ = 2-week alpha date code

Product marking for SOT-23:

TO-236AB

(SOT-23)

top view

N1A❋

TO-92

S G D

VN2106

VN2110

Related parts for VN2110K1

VN2110K1 Summary of contents

Page 1

... Vertical DMOS FETs † TO-236AB* Die – — VN2110K1 VN2110ND Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inher- ent in MOS devices ...

Page 2

Thermal Characteristics Package I (continuous) D TO-92 0.3A TO-236AB 0.2A † I (continuous) is limited by max rated Total for package. Electrical Characteristics Symbol Parameter BV Drain-to-Source DSS Breakdown Voltage V Gate Threshold Voltage GS(th) ...

Page 3

Typical Performance Curves Output Characteristics 2.0 1.6 1.2 0.8 0 (volts) DS www.DataSheet4U.com Transconductance vs. Drain Current 0 25V DS 0.4 T 0.3 0.2 0 0.2 0.4 I (amperes) D Maximum ...

Page 4

... DS 1.6 1.2 0.8 0 (volts) GS Capacitance vs. Drain-to-Source Voltage 1MHz C ISS 25 C RSS (volts) DS ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 100 150 1.4 1.2 1.0 0.8 0 On-Resistance vs. Drain Current 10V ...

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