TP0610T Supertex Inc, TP0610T Datasheet

TP0610T

Manufacturer Part Number

TP0610T

Description

P-Channel Enhancement-Mode Vertical DMOS FETs

Manufacturer

Supertex Inc

Datasheets

1.TP0610T.pdf (5 pages)

2.TP0610T.pdf (4 pages)

3.TP0610T.pdf (4 pages)

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Features

►

Applications

►

-G indicates package is RoHS compliant (‘Green’)

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the device may

occur. Functional operation under these conditions is not implied. Continuous operation

of the device at the absolute rating level may affect device reliability. All voltages are

referenced to device ground.

* Distance of 1.6mm from case for 10 seconds.

Ordering Information

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Soldering temperature*

High input impedance and high gain

Low power drive requirement

Ease of paralleling

Low C

Excellent thermal stability

Integral source-drain diode

Free from secondary breakdown

Complementary N- and P-channel devices

Logic level interfaces - ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic systems

Analog switches

Power management

Telecom switches

TP0610T

Device

ISS

and fast switching speeds

TO-236AB (SOT-23)

Package Options

TP0610T-G

P-Channel Enhancement Mode

Vertical DMOS FETs

-55°C to +150°C

+300°C

Value

±20V

DGS

DSS

General Description

This low threshold enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and with the high input

impedance and positive temperature coefﬁ cient inherent

in MOS devices. Characteristic of all MOS structures,

this device is free from thermal runaway and thermally-

induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching

speeds are desired.

Pin Conﬁ guration

Product Marking

DSS

-60

(V)

/BV

DGS

T50W

TO-236AB (SOT-23) (T)

DRAIN

W = Code for week sealed

(max)

DS(ON)

(Ω)

GATE

= “Green” Packaging

SOURCE

TP0610T

(min)

(mA)

D(ON)

-50

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