TN2540N8 Supertex Inc, TN2540N8 Datasheet

TN2540N8

Manufacturer Part Number

TN2540N8

Description

N-Channel Enhancement-Mode Vertical DMOS FETs

Manufacturer

Supertex Inc

Datasheet

1.TN2540N8.pdf (4 pages)

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Ordering Information

†

Features

❏ Low threshold — 2.0V max.

❏ High input impedance

❏ Low input capacitance — 125pF max.

❏ Fast switching speeds

❏ Low on resistance

❏ Free from secondary breakdown

❏ Low input and output leakage

❏ Complementary N- and P-channel devices

Applications

❏ Logic level interfaces – ideal for TTL and CMOS

❏ Solid state relays

❏ Battery operated systems

❏ Photo voltaic drives

❏ Analog switches

❏ General purpose line drivers

❏ Telecom switches

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

MIL visual screening available.

Distance of 1.6 mm from case for 10 seconds.

400V

DSS

DGS

(max)

12Ω

DS(ON)

(max)

2.0V

GS(th)

-55°C to +150°C

N-Channel Enhancement-Mode

Vertical DMOS FETs

(min)

1.0A

D(ON)

300°C

± 20V

DGS

DSS

TN2540N3

Low Threshold DMOS Technology

These low threshold enhancement-mode (normally-off) transis-

tors utilize a vertical DMOS structure and Supertex's well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

Package Options

TO-92

Where ❋ = 2-week alpha date code

Product marking for TO-243AA

Note: See Package Outline section for dimensions.

Order Number / Package

TN5D❋

TO-92

TO-243AA*

TN2540N8

S G D

Low Threshold

TN2540ND

Die

TO-243AA

(SOT-89)

†

TN2540

Related parts for TN2540N8

TN2540N8 Summary of contents

Page 1

... Package Options BV DSS BV DGS ± 20V -55°C to +150°C 300°C Note: See Package Outline section for dimensions. 1 TN2540 Low Threshold Order Number / Package † TO-243AA* Die TN2540N8 TN2540ND TN5D❋ TO-243AA (SOT-89) TO-92 D ...

Page 2

Thermal Characteristics Package I (continuous)* D TO-92 175mA TO-243AA 260mA * I (continuous) is limited by max rated † Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P Electrical Characteristics Symbol Parameter Drain-to-Source BV ...

Page 3

Typical Performance Curves ° ° ° ° ° 3 TN2540 ...

Page 4

... V = 25V DS 1.2 0.9 0.6 0 (volts) GS Capacitance vs. Drain-to-Source Voltage 200 f = 1MHz 150 100 50 C RSS (volts) DS ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited 100 150 0 V 1.4 1.2 1.0 0 ISS On-Resistance vs ...

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