TN2106 Supertex Inc, TN2106 Datasheet - Page 2

• Manufacturer Part Number: TN2106
• Description: N-Channel Enhancement-Mode Vertical DMOS FETs
• Manufacturer: Supertex Inc

Thermal Characteristics
*
Electrical Characteristics
Notes:
1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300 s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
I
Package
TO-236AB
TO-92
D
Symbol
BV
V
I
I
I
R
G
C
C
C
t
t
t
t
V
t
(continuous) is limited by max rated T
OUTPUT
GSS
DSS
D(ON)
d(ON)
r
d(OFF)
f
rr
V
R
GS(th)
SD
DS(ON)
ISS
OSS
RSS
FS
INPUT
DSS
GS(th)
DS(ON)
10V
V
0V
0V
DD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Change in V
Gate Body Leakage
Zero Gate Voltage Drain Current
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
Change in R
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
10%
I
D
(continuous)*
0.28A
0.30A
t
d(ON)
10%
t
GS(th)
DS(ON)
(ON)
90%
j
.
Parameter
with Temperature
t
r
with Temperature
I
D
(pulsed)
90%
t
d(OFF)
0.8A
1.0A
t
(@ 25 C unless otherwise specified)
(OFF)
t
90%
F
10%
Min
Power Dissipation
150
0.6
0.6
60
7-72
@ T
0.36W
0.74W
A
0.70
Typ
-3.8
400
400
= 25 C
0.1
1.2
35
17
7
3
5
6
5
Max
-5.5
100
100
GENERATOR
2.0
5.0
2.5
1.0
1.8
50
25
1
8
5
8
9
8
PULSE
R
INPUT
mV/ C
gen
200
125
C/W
%/ C
Unit
m
nA
pF
ns
ns
jc
V
V
A
V
A
A
V
I
R
I
V
I
V
V
V
T
V
V
V
V
V
V
I
I
D
D
D
SD
SD
350
170
C/W
A
DD
GS
GS
GS
GS
GS
GS
GS
GS
DS
GS
GEN
= 0.5A
= 1mA, V
= 1mA, V
ja
= 125 C
= 0.5A, V
= 0.5A, V
= 10V, I
= 0V, V
= 25V
= V
= 20V, V
= 0V, V
= 0V, V
= 10V, V
= 4.5V, I
= 10V, I
= 25V, I
= 25
DS
Conditions
, I
0.28A
0.30A
GS
GS
DS
DS
DS
D
D
D
I
D
GS
GS
DR
D
DS
= 1mA
= 500mA
= 500mA
= 500mA
DS
= 25V, f = 1MHz
= 0V
= Max Rating
= 0.8 Max Rating
= 200mA
= V
*
= 0V
= 0V
= 25V
V
= 0V
DD
DS
R
L
D.U.T.
OUTPUT
0.8A
1.0A
I
TN2106
DRM