GLS27SF512-70-3C-NHE Greenliant, GLS27SF512-70-3C-NHE Datasheet

GLS27SF512-70-3C-NHE

Manufacturer Part Number

GLS27SF512-70-3C-NHE

Description

Manufacturer

Greenliant

Datasheet

1.GLS27SF512-70-3C-NHE.pdf (23 pages)

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Bonase Electronics (HK) Co., Limited

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GLS27SF512-70-3C-NHE

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FEATURES:

• Organized as 64K x8 / 128K x8 / 256K x8

• 4.5-5.5V Read Operation

• Superior Reliability

• Low Power Consumption

• Fast Read Access Time

PRODUCT DESCRIPTION

The GLS27SF512/010/020 are a 64K x8 / 128K x8 / 256K

x8 CMOS, Many-Time Programmable (MTP) low cost

flash, manufactured with high performance SuperFlash

technology. The split-gate cell design and thick oxide tun-

neling injector attain better reliability and manufacturability

compared with alternate approaches. These MTP devices

can be electrically erased and programmed at least 1000

times using an external programmer with a 12V power sup-

ply. They have to be erased prior to programming. These

devices conform to JEDEC standard pinouts for byte-wide

memories.

Featuring

GLS27SF512/010/020 provide a Byte-Program time of 20

µs. Designed, manufactured, and tested for a wide spec-

trum of applications, these devices are offered with an

endurance of at least 1000 cycles. Data retention is rated at

greater than 100 years.

The GLS27SF512/010/020 are suited for applications that

require infrequent writes and low power nonvolatile stor-

age. These devices will improve flexibility, efficiency, and

performance while matching the low cost in nonvolatile

applications that currently use UV-EPROMs, OTPs, and

mask ROMs.

512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash

– Endurance: At least 1000 Cycles

– Greater than 100 years Data Retention

– Active Current: 20 mA (typical)

– Standby Current: 10 µA (typical)

– 70 ns

high-performance

GLS27SF512 / GLS27SF010 / GLS27SF020

GLS27SF512 / 010 / 0205.0V-Read 512Kb / 1Mb / 2Mb (x8) MTP flash memories

Byte-Program,

www.greenliant.com

the

• Fast Byte-Program Operation

• Electrical Erase Using Programmer

• TTL I/O Compatibility

• JEDEC Standard Byte-wide EPROM Pinouts

• Packages Available

• All non-Pb (lead-free) devices are RoHS compliant

To meet surface mount and conventional through hole

requirements, the GLS27SF512 are offered in 32-lead

PLCC, 32-lead TSOP, and 28-pin PDIP packages. The

GLS27SF010/020 are offered in 32-pin PDIP, 32-lead

PLCC, and 32-lead TSOP packages. See Figures 3, 4,

and 5 for pin assignments.

Device Operation

The GLS27SF512/010/020 are a low cost flash solution

that can be used to replace existing UV-EPROM, OTP,

and mask ROM sockets. These devices are functionally

(read and program) and pin compatible with industry

standard EPROM products. In addition to EPROM func-

tionality, these devices also support electrical Erase

operation via an external programmer. They do not

require a UV source to erase, and therefore the pack-

ages do not have a window.

Read

The Read operation of the GLS27SF512/010/020 is con-

trolled by CE# and OE#. Both CE# and OE# have to be

low for the system to obtain data from the outputs. Once

the address is stable, the address access time is equal to

the delay from CE# to output (T

output after a delay of T

assuming that CE# pin has been low and the addresses

– Byte-Program Time: 20 µs (typical)

– Chip Program Time:

– Does not require UV source

– Chip-Erase Time: 100 ms (typical)

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

– 32-pin PDIP for GLS27SF010/020

1.4 seconds (typical) for GLS27SF512

2.8 seconds (typical) for GLS27SF010

5.6 seconds (typical) for GLS27SF020

from the falling edge of OE#,

). Data is available at the

S71152-13-000

Data Sheet

05/10

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