SSD95N03 SECOS [SeCoS Halbleitertechnologie GmbH], SSD95N03 Datasheet

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SSD95N03

Manufacturer Part Number
SSD95N03
Description
96A , 30V , RDS(ON) 4m N-Ch Enhancement Mode Power MOSFET
Manufacturer
SECOS [SeCoS Halbleitertechnologie GmbH]
Datasheet
http://www.SeCoSGmbH.com/
24-Nov-2011 Rev. A
DESCRIPTION
FEATURES
MARKING
PACKAGE INFORMATION
ABSOLUTE MAXIMUM RATINGS
N-ch MOSFETs with extreme high cell density , which provide
excellent R
buck converter applications .
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Operating Junction and Storage Temperature Range
Maximum Thermal Resistance Junction-Ambient
Maximum Thermal Resistance Junction-Case
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
95N03
The SSD95N03 is the highest performance trench
Package
TO-252
DS(ON)
Elektronische Bauelemente
Date Code
and gate charge for most of the synchronous
Parameter
2
4
1
MPQ
2.5K
3
V
V
GS
GS
=10V, T
=10V,T
T
C
(T
Leader Size
=25° C
C
A suffix of “-C” specifies halogen free
C
=100° C
A
=25° C
13 inch
=25° C unless otherwise specified)
1
Thermal Resistance Rating
RoHS Compliant Product
1
Symbol
T
J
R
R
V
, T
V
P
E
I
I
I
DM
AS
θJC
θJA
GS
DS
D
AS
D
STG
N-Ch Enhancement Mode Power MOSFET
96A , 30V , R
-55~175
Rating
62.5
0.42
53.8
±20
192
317
SSD95N03
88
2.4
30
96
62
Any changes of specification will not be informed individually.
M
REF.
A
B
C
D
E
F
G
H
1
Gate
TO-252(D-Pack)
DS(ON)
Min.
6.35
5.20
2.15
0.45
2.40
5.40
0.64
6.8
A
B
Millimeter
K
J
Max.
6.80
5.50
2.40
0.58
6.25
1.20
7.5
3.0
4m
G E
H
Source
Drain
F
2
3
REF.
M
K
N
O
P
° C / W
° C / W
J
W / ° C
Unit
mJ
A
° C
W
V
V
A
A
A
Min.
0.64
0.50
0.43
0.9
Millimeter
2.30 REF.
0
Page 1 of 4
Max.
0.90
1.65
0.15
0.58
1.1
O
C
D
N
P

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SSD95N03 Summary of contents

Page 1

... Elektronische Bauelemente DESCRIPTION The SSD95N03 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent R and gate charge for most of the synchronous DS(ON) buck converter applications . FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline ...

Page 2

... EAS 98 Source-Drain Diode =25V,V =10V,L=0.1mH and real applications , should be limited by total power dissipation SSD95N03 96A , 30V , R 4m DS(ON) N-Ch Enhancement Mode Power MOSFET Typ. Max. Unit Teat Conditions - - Reference to 25° C, 0.0213 - V / ° C ...

Page 3

... Elektronische Bauelemente CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 24-Nov-2011 Rev. A SSD95N03 96A , 30V , R 4m DS(ON) N-Ch Enhancement Mode Power MOSFET Any changes of specification will not be informed individually. Page ...

Page 4

... Elektronische Bauelemente CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 24-Nov-2011 Rev. A SSD95N03 96A , 30V , R 4m DS(ON) N-Ch Enhancement Mode Power MOSFET Any changes of specification will not be informed individually. Page ...

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