SSD95N03 SECOS [SeCoS Halbleitertechnologie GmbH], SSD95N03 Datasheet - Page 2

• Manufacturer Part Number: SSD95N03
• Description: 96A , 30V , RDS(ON) 4m
  N-Ch Enhancement Mode Power MOSFET
• Manufacturer: SECOS [SeCoS Halbleitertechnologie GmbH]

http://www.SeCoSGmbH.com/
24-Nov-2011 Rev. A
ELECTRICAL CHARACTERISTICS
Notes:
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient △BV
Gate-Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Diode Forward Voltage
Continuous Source Current
Pulsed Source Current
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width≦300µs , duty cycle≦2%
3. The EAS data shows Max. rating . The test condition is V
4. The power dissipation is limited by 175° C junct ion temperature
5. The Min. value is 100% EAS tested guarantee.
6. The data is theoretically the same as I
Elektronische Bauelemente
Parameter
2,6
2
1,6
5
T
T
J
J
=25° C
=55° C
2
D
Guaranteed Avalanche Characteristics
and I
(T
DM
J
, in real applications , should be limited by total power dissipation.
Symbol
=25° C unless otherwise specified)
R
BV
V
T
T
EAS
I
I
DS(ON)
C
DSS
Q
C
C
V
Q
GS(th)
Source-Drain Diode
I
GSS
Q
g
DSS
d(on)
d(off)
T
T
I
SM
oss
SD
iss
rss
S
DSS
fs
gd
gs
g
r
f
/△T
DD
=25V,V
J
Static
Min.
1.0
30
98
-
GS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
=10V,L=0.1mH,I
N-Ch Enhancement Mode Power MOSFET
0.0213
3075
Typ.
26.5
31.6
15.2
11.7
400
315
3.4
5.2
8.6
19
58
-
9
-
-
-
-
-
-
-
-
Max.
±100
4000
AS
96A , 30V , R
530
192
2.5
1.2
96
5
1
4
6
-
-
-
-
-
-
-
-
-
-
-
-
=53.8A
SSD95N03
Any changes of specification will not be informed individually.
V / ° C
Unit
m
mJ
nA
µA
nC
nS
pF
V
V
S
V
A
A
DS(ON)
V
V
Reference to 25° C,
I
V
V
V
V
V
V
I
V
V
V
I
V
R
V
V
f =1.0MHz
V
I
V
D
D
D
S
GS
DS
DS
GS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
DD
D
=1mA
=15A
=15A
G
=30A, V
=V
=3.3
=V
=5V, I
=24V, V
=24V, V
=15V
=15 V
=0, I
= ±20V
=10V, I
=4.5V, I
=4.5V
=15 V
=10V
=25V,L=0.1mH , I
=0
Teat Conditions
G
4m
GS
=0, Force Current
D
, I
=250µA
D
GS
=30A
D
D
D
=250µA
GS
GS
=30A
=0
=15A
=0
=0
Page 2 of 4
AS
=30A