GS820322T-138 ETC1 [List of Unclassifed Manufacturers], GS820322T-138 Datasheet - Page 10

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GS820322T-138

Manufacturer Part Number
GS820322T-138
Description
64K x 32 2M Synchronous Burst SRAM
Manufacturer
ETC1 [List of Unclassifed Manufacturers]
Datasheet
Capacitance
(T
Note: This parameter is sample tested.
Package Thermal Characteristics
Notes:
1.
2.
3.
4.
Rev: 1.04 2/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Control Input Capacitance
Input Capacitance
Output Capacitance
Junction to Ambient (at 200 lfm)
Junction to Ambient (at 200 lfm)
Junction to Case (TOP)
Undershoot Measurement and Timing
A
V
SS
= 25
Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient.
Temperature air flow, board density, and PCB thermal resistance.
SCMI G-38-87.
Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1.
For x18 configuration, consult factory.
-2.0V
50%
V
V
SS
IH
o
C, f = 1 MH
Parameter
Rating
Z
20% tKC
, V
DD
= 3.3 V)
Symbol
C
C
OUT
C
Layer Board
IN
I
single
four
10/23
Test conditions
V
V
V
DD
OUT
Symbol
IN
R
R
R
= 3.3 V
= 0 V
= 0 V
JA
JA
JC
Overshoot Measurement and Timing
V
DD
+-2.0V
50%
V
V
DD
IL
TQFP Max
GS82032T/Q-150/138/133/117/100/66
40
24
9
Typ.
3
4
6
20% tKC
QFP Max
Max.
4
5
7
TBD
TBD
TBD
© 2000, Giga Semiconductor, Inc.
Unit
pF
pF
pF
Unit
C/W
C/W
C/W
Preliminary
Notes
1,2,4
1,2,4
3,4

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