K4M513233C-SDF75 SAMSUNG [Samsung semiconductor], K4M513233C-SDF75 Datasheet - Page 7

• Manufacturer Part Number: K4M513233C-SDF75
• Description: 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
• Manufacturer: SAMSUNG [Samsung semiconductor]

OPERATING AC PARAMETER
K4M513233C - S(D)N/G/L/F
(AC operating conditions unless otherwise noted)
NOTES:
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time
2. Minimum delay is required to complete write.
3. Minimum tRDL=2CLK and tDAL(= tRDL + tRP) is required to complete both of last data write command(tRDL) and precharge command(tRP).
4. All parts allow every cycle column address change.
5. In case of row precharge interrupt, auto precharge and read burst stop.
6. Maximum burst refresh cycle : 8
Row active to row active delay
RAS to CAS delay
Row precharge time
Row active time
Row cycle time
Last data in to row precharge
Last data in to Active delay
Last data in to new col. address delay
Last data in to burst stop
Col. address to col. address delay
Number of valid output data
Number of valid output data
Number of valid output data
and then rounding off to the next higher integer.
Parameter
CAS latency=3
CAS latency=2
CAS latency=1
t
t
t
t
t
t
t
t
t
RAS
t
Symbol
RRD
RCD
t
RAS
RDL
CDL
CCD
DAL
BDL
RP
RC
(min)
(min)
(max)
(min)
(min)
(min)
(min)
(min)
(min)
(min)
(min)
7
-75
15
18
18
45
63
-
tRDL + tRP
Version
100
2
1
1
1
2
1
22.5
22.5
67.5
-7L
15
45
0
Mobile-SDRAM
Unit
CLK
CLK
CLK
CLK
ea
ns
ns
ns
ns
us
ns
-
March 2006
Note
1,6
1
1
1
1
2
3
2
2
4
5