K4M56323LE-MC1H SAMSUNG [Samsung semiconductor], K4M56323LE-MC1H Datasheet - Page 8

• Manufacturer Part Number: K4M56323LE-MC1H
• Description: 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4M56323LE - M(E)E/N/S/C/L/R
AC CHARACTERISTICS
NOTES :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
CLK cycle time
CLK cycle time
CLK cycle time
CLK to valid output delay
CLK to valid output delay
CLK to valid output delay
Output data hold time
Output data hold time
Output data hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output in Hi-Z
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Parameter
CAS latency=3
CAS latency=2
CAS latency=1
CAS latency=3
CAS latency=2
CAS latency=1
CAS latency=3
CAS latency=2
CAS latency=1
CAS latency=3
CAS latency=2
CAS latency=1
(AC operating conditions unless otherwise noted)
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
SAC
SAC
SAC
t
t
t
SHZ
SLZ
CC
CC
CC
OH
OH
OH
CH
SH
CL
SS
Min
9.5
2.5
2.5
2.5
2.5
2.0
1.0
8
1
-
-
-80
1000
Max
6
7
6
7
-
-
Min
9.5
9.5
2.5
2.5
3.0
3.0
2.5
1.5
1
-
-
-1H
1000
Max
7
7
7
7
-
-
Min
9.5
2.5
2.5
2.5
3.0
3.0
2.5
1.5
12
25
Mobile-SDRAM
1
-1L
1000
Max
20
20
7
8
7
8
February 2004
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
1,2
1
2
3
3
3
3
2