SI8610 SILABS [Silicon Laboratories], SI8610 Datasheet - Page 11

• Manufacturer Part Number: SI8610
• Description: LOW-POWER SINGLE AND DUAL-CHANNEL DIGITAL ISOLATORS
• Manufacturer: SILABS [Silicon Laboratories]

Table 4. Electrical Characteristics
(V
Parameter
VDD Undervoltage Threshold
VDD Undervoltage Threshold
VDD Negative-Going Lockout
Hysteresis
Positive-Going Input Threshold
Negative-Going Input Threshold
Input Hysteresis
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Input Leakage Current
Output Impedance
Si8610Bx, Ex
V
V
V
V
Si8620Bx, Ex
V
V
V
V
Si8621Bx, Ex
V
V
V
V
Si8622Bx, Ex
V
V
V
V
Notes:
DD1
DD1
DD2
DD1
DD2
DD1
DD2
DD1
DD2
DD1
DD2
DD1
DD2
DD1
DD2
DD1
DD2
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a
2. t
3. Start-up time is the time period from the application of power to valid data at the output.
= 2.5 V ±5%, V
combination of the value of the on-chip series termination resistor and channel resistance of the output driver
FET. When driving loads where transmission line effects will be a factor, output pins should be appropriately
terminated with controlled impedance PCB traces.
operating at the same supply voltages, load, and ambient temperature.
PSK(P-P)
is the magnitude of the difference in propagation delay times measured between different units
1
DD2
= 2.5 V ±5%, T
DC Supply Current (All inputs 0 V or at supply)
VDDUV+
VDDUV–
A
VDD
Symbol
= –40 to 125 ºC)
V
VT+
VT–
V
V
V
V
Z
HYS
I
OH
OL
IH
L
IL
O
HYS
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
Test Condition
All inputs falling
All inputs rising
DD1
DD1
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
loh = –4 mA
= 0(Bx), 1(Ex)
= 0(Bx), 1(Ex)
= 1(Bx), 0(Ex)
= 1(Bx), 0(Ex)
= 0(Bx), 1(Ex)
= 0(Bx), 1(Ex)
= 1(Bx), 0(Ex)
= 1(Bx), 0(Ex)
= 0(Bx), 1(Ex)
= 0(Bx), 1(Ex)
= 1(Bx), 0(Ex)
= 1(Bx), 0(Ex)
= 0(Bx), 1(Ex)
= 0(Bx), 1(Ex)
= 1(Bx), 0(Ex)
= 1(Bx), 0(Ex)
lol = 4 mA
, V
, V
Rev. 1.3
DD2
DD2
falling
rising
V
DD1
,V
1.95
1.88
0.40
Min
1.6
1.1
2.0
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
DD2
Si8610/20/21/22
– 0.4
0.45
2.24
2.16
Typ
2.3
0.2
0.6
0.8
1.8
0.8
0.8
1.4
3.3
1.4
1.2
1.2
2.4
2.4
2.6
3.3
4.0
4.8
70
50
—
—
—
—
—
2.375
2.325
Max
0.50
±10
1.2
1.5
2.9
1.5
1.4
2.2
5.3
2.2
1.9
1.9
3.8
3.8
4.2
5.3
6.4
7.7
1.9
1.4
0.8
0.4
95
—
—
—
Unit
mV
mA
mA
mA
mA
µA

V
V
V
V
V
V
V
V
V
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