K9F5608Q0C-D SAMSUNG [Samsung semiconductor], K9F5608Q0C-D Datasheet - Page 12

• Manufacturer Part Number: K9F5608Q0C-D
• Description: 32M x 8 Bit 16M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

DC AND OPERATING CHARACTERISTICS
NOTE : V
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All
inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
K9F5608Q0C
K9F5608D0C
K9F5608U0C
Operating
Current
Parameter
IL
can undershoot to -0.4V and V
Sequential Read
Program
Erase
K9F5616Q0C
K9F5616D0C
K9F5616U0C
Symbol
I
OL
I
I
I
I
I
V
V
V
V
CC
CC
CC
SB
SB
I
(R/B)
I
LO
OH
LI
IH*
OL
IL*
1
2
1
2
3
tRC=50ns, CE=V
I
CE=V
CE=V
V
V
I/O pins
Except I/O pins
K9F56XXQ0C :I
K9F56XXD0C :I
K9F56XXU0C :I
K9F56XXQ0C :I
K9F56XXD0C :I
K9F56XXU0C :I
K9F56XXQ0C :V
K9F56XXD0C :V
K9F56XXU0C :V
OUT
IH
IN
OUT
can overshoot to V
=0 to Vcc(max)
=0mA
=0 to Vcc(max)
Test Conditions
IH
CC
, WP=0V/V
-0.2, WP=0V/V
-
-
-
OH
OH
OL
OL
OH
OL
OL
OL
OL
IL
=100 A
=2.1mA
=100uA
=-100 A
=-100 A
=-400 A
CC
=0.1V
=0.4V
CC
=0.1V
+0.4V for durations of 20 ns or less.
CC
(Recommended operating conditions otherwise noted.)
12
V
Vcc
V
Min
-0.4
-0.4
-0.3
-0.1
CCQ
3
CC
-
-
-
-
-
-
-
-
Q
1.8V
Typ
10
8
8
8
4
-
-
-
-
-
-
-
-
V
Max
+0.3
+0.3
V
0.4
0.1
15
15
15
50
CCQ
1
10
10
CC
-
-
V
V
Min
-0.4
V
-0.4
-0.3
-0.4
CCQ
CCQ
K9F56XXX0C
3
-
-
-
-
-
-
-
CC
-
2.65V
Typ
10
10
10
10
4
-
-
-
-
-
-
-
-
FLASH MEMORY
V
Max
+0.3
+0.3
V
0.5
0.4
20
20
20
50
CCQ
1
10
10
CC
-
-
Min Typ Max
-0.3
2.0
2.0
2.4
8
-
-
-
-
-
-
-
-
3.3V
10
10
10
10
10
-
-
-
-
-
-
-
-
V
+0.3
+0.3
V
0.8
0.4
20
25
25
50
CCQ
1
10
10
CC
-
-
Unit
mA
mA
V
A