SFS4410 ETC [List of Unclassifed Manufacturers], SFS4410 Datasheet

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SFS4410

Manufacturer Part Number
SFS4410
Description
Logic N-Channel MOSFET
Manufacturer
ETC [List of Unclassifed Manufacturers]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SFS4410
Manufacturer:
SEMIWELL
Quantity:
20 000
Absolute Maximum Ratings
Features
Thermal Characteristics
General Description
This Power MOSFET is produced using Semiwell’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance, and rugged
avalanche characteristics.This Power MOSFET is well suited
January, 2003. Rev. 0.
for power management circuit or DC-DC converter.
R
Gate Charge (Typical 33nC)
Maximum Junction Temperature Range (150°C)
Available in Tape and Reel
R
Symbol
DS(on)
Symbol
DS(on)
T
V
STG,
V
R
I
P
T
DSS
I
DM
SemiWell
GS
θJA
D
D
L
T
(Max 0.0135Ω )@V
(Max 0.020Ω )@V
J
Drain to Source Voltage
Continuous Drain Current(@T
Drain Current Pulsed
Gate to Source Voltage
Total Power Dissipation Single Operation (T
Total Power Dissipation Single Operation (T
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Resistance, Junction-to-Ambient
Semiconductor
GS
GS
=4.5V
Parameter
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
=10V
Parameter
A
= 25
°C)
(Note 4)
A
A
=25
=70
Logic N-Channel MOSFET
°C
°C
)
Min.
)
-
(Note 1)
Typ.
Value
Symbol
-
8-SOIC
- 55 ~ 150
D
Value
±
300
2.5
1.6
D
30
10
50
20
D
D
D
D
D
Max.
SFS4410
50
5
6
7
8
D
S
S
Units
Units
°C
°C
°C/W
W
W
S
V
A
A
V
4
3
2
1
G
G
S
S
S
1/6

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SFS4410 Summary of contents

Page 1

... Parameter Thermal Resistance, Junction-to-Ambient R θJA January, 2003. Rev. 0. Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. Logic N-Channel MOSFET Parameter ° (Note 1) °C = °C = Min. - (Note 4) SFS4410 Symbol 8-SOIC ...

Page 2

... SFS4410 Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS Δ Breakdown Voltage Temperature DSS coefficient Δ Drain-Source Leakage Current DSS Gate-Source Leakage, Forward I GSS Gate-Source Leakage, Reverse On Characteristics V Gate Threshold Voltage GS(th) Static Drain-Source On-state R DS(ON) Resistance Dynamic Characteristics C Input Capacitance ...

Page 3

... rss gd 8 Notes : ※ f=1MHz SFS4410 Fig 2. Transfer Characteristics o 150 -55 C Notes : ※ 15V DS 2. 250µ s Pulse Test Gate-Source Voltage [V] GS Allowable Case Temperature 150 ℃ 25 ℃ ...

Page 4

... SFS4410 Fig 7. Breakdown Voltage Variation vs. Junction Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Fig 9. Normalized Transient Thermal Response Curve 4/6 Fig 8. On-Resistance Variation 2.0 1.5 1.0 Notes : ※ 0 250 µ ...

Page 5

... 10% 10% 10% 10% 10% 10% 10 DUT DUT DUT DUT SFS4410 Charge Charge Charge ...

Page 6

... SFS4410 8-SOIC Package Dimension Dim. Min. A 1.35 B 0.1 C 0.38 D 0.19 E 4 5.8 I 0.5 J 0’ K 0.250 E G 6/6 mm Typ. Max. 1.55 1.75 0.175 0.25 0.445 0.510 0.22 0.25 4.9 5 3.9 4 1.27 BSC 6 6.2 0.715 0.93 4’ 8’ 0.375 0. 0 Inch Min. Typ. Max. 0.053 0.061 0.069 0.004 0.007 0.010 0.015 0.018 0.020 0.007 ...

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