RM100CA-XXF MITSUBISHI [Mitsubishi Electric Semiconductor], RM100CA-XXF Datasheet - Page 3

• Manufacturer Part Number: RM100CA-XXF
• Description: HIGH SPEED SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

PERFORMANCE CURVE
2000
1800
1600
1400
1200
1000
800
600
400
200
10
10
10
10
10
10
10
10
REVERSE RECOVERY CHARACTERISTICS
MAXIMUM FORWARD CHARACTERISTIC
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0.4
3
2
1
0
3
2
1
0
10
1
RATED SURGE (NON-REPETITIVE)
V
I
0
F
T
R
=100A
2
=300/600V
j
=25°C
2
3
0.8
T
T
4
FORWARD VOLTAGE (V)
t
rr
FORWARD CURRENT
j
j
VS. –di/dt (TYPICAL)
=25°C
=150°C
3
5
CONDUCTION TIME
(CYCLES AT 60Hz)
7
4
10
5
–di/dt (A/ s)
1.2
1
7
2
10
3
4
5
1.6
7
20
10
30
2
Q
2
2.0
40
rr
3
I
50
rr
4
5
70
7
100
2.4
10
10
10
10
10
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
0
–1
MITSUBISHI FAST RECOVERY DIODE MODULES
10
10
10
10
1.0
0.8
0.6
0.4
0.2
REVERSE RECOVERY CHARACTERISTICS
0
10
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
0
10
10
VS. FORWARD CURRENT (TYPICAL)
IMPEDANCE (JUNCTION TO CASE)
MAXIMAM TRANSIENT THERMAL
–3
0
V
di/dt=–200A/µs
0
R
2 3 4 57
2
2
=300/600V
3
3
FORWARD CURRENT (A)
T
T
4
4
j
j
5
=25°C
=150°C
5
RM100CA/C1A-XXF
7
7
HIGH SPEED SWITCHING USE
10
10
10
1
–2
1
TIME (s)
2
2
3
3
4
4
5
5
7
7
10
10
–1
2
2
2
INSULATED TYPE
3
3
Q
4
I
4
t
rr
rr
rr
5
5
7
7
10
10
10
10
10
10
7
5
3
2
7
5
3
2
7
5
3
2
0
3
2
1
0
–1
Feb.1999