LS5018_SOT-23

Manufacturer Part NumberLS5018_SOT-23
DescriptionP-Channel JFET switch
ManufacturerMICROSS [Micross Components]
LS5018_SOT-23 datasheet
 


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Linear Systems replaces discontinued Siliconix 2N5018
The LS5018 is a single P-Channel JFET switch
This p-channel analog switch is designed to provide low
on-resistance and fast switching.
The SOT-23 package provides ease of manufacturing,
and a lower cost assembly option.
(See Packaging Information).
LS5018 Benefits:
Low Insertion Loss
No offset or error voltage generated by closed
switch
Purely resistive
LS5018 Applications:
Analog Switches
Commutators
Choppers
LS5018 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
BV
 
Gate to Source Breakdown Voltage 
GSS
V
 
Gate to Source Cutoff Voltage 
GS(off)
V
 
Drain to Source On Voltage 
DS(on)
I
 
Drain to Source Saturation Current (Note 2) 
DSS
I
 
Gate Reverse Current 
GSS
Click To Buy
I
 
Drain Cutoff Current 
D(off)
I
 
Drain Reverse Current 
DGO
r
 
Drain to Source On Resistance 
DS(on)
LS5018 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
CHARACTERISTIC 
r
 
Drain to Source On Resistance 
DS(on)
C
 
Input Capacitance 
iss
C
 
Reverse Transfer Capacitance 
rss
LS5018 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
CHARACTERISTIC 
t
 
Turn On Time 
d(on)
t
 
Turn On Rise Time 
r
t
 
Turn Off Time 
d(off)
t
 
Turn Off Fall Time 
f
Note 1 ‐  Absolute maximum ratings are limiting values above which LS5018 serviceability may be impaired.
Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
                                                                                                                                                                                                              SWITCHING TEST CIRCUIT
LS5018 SWITCHING CIRCUIT PARAMETERS                                                                                                                          
Available Packages:
V
 
‐6V 
 
DD
V
 
12V 
 
GG
LS5018 in SOT-23
R
 
910Ω 
 
L
LS5018 in bare die.
R
 
220Ω 
 
G
I
 
‐6mA 
 
D(on)
Please contact Micross for full
 
 
 
package and die dimensions
Micross Components Europe
 
 
 
 
 
 
 
 
 
 
 
 
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility
is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication
or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email:
LS5018
P-CHANNEL JFET
FEATURES 
DIRECT REPLACEMENT FOR SILICONIX 2N5018 
ZERO OFFSET VOLTAGE 
LOW ON RESISTANCE 
ABSOLUTE MAXIMUM RATINGS  
@ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature 
Operating Junction Temperature 
Maximum Power Dissipation 
Continuous Power Dissipation  
MAXIMUM CURRENT
Gate Current (Note 1) 
MAXIMUM VOLTAGES 
Gate to Drain Voltage 
Gate to Source Voltage 
 
MIN 
TYP. 
30 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐10 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
MIN 
TYP. 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
 
UNITS 
15 
 
 
20 
ns 
15 
50 
                                                                                                                 
SOT-23 (Top View)
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
chipcomponents@micross.com
‐55°C to +200°C 
‐55°C to +200°C 
MAX 
UNITS 
CONDITIONS 
‐‐ 
 
I
= 1µA,   V
10 
V
 = ‐15V, I
DS
‐0.5 
V
 = 0V, I
GS
‐‐ 
mA 
V
 = ‐20V, V
DS
nA 
V
= 15V,  V
GS 
‐10 
V
 = ‐15V, V
DS
‐10 
µA 
V
 = ‐15V, V
DS
‐2 
nA 
V
 = ‐15V, I
DG
75 
Ω 
I
= ‐1mA,   V
MAX 
UNITS 
CONDITIONS 
75 
Ω 
I
= 0A,   V
 = 0V,   f = 1kHz 
GS
45 
pF 
V
 = ‐15V, V
DS
GS 
10 
V
 = 0V, V
= 12V, f = 1MHz 
DS
GS 
CONDITIONS 
V
(L) = 12V 
GS
V
(H) = 0V 
GS
 
See Switching Circuit 
Web:
www.micross.com/distribution.aspx
r
≤ 75Ω 
DS(on) 
500mW 
I
 = ‐50mA 
G
V
 = 30V 
GDS
V
 = 30V 
GSS
 
 = 0V 
DS
 = ‐1µA 
D
 = ‐6mA 
D
= 0V 
GS 
 = 0V 
DS
= 12V 
GS 
= 7V 
GS 
= 0A 
 = 0V 
GS
= 0V, f = 1MHz